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1. (WO2018216612) APPARATUS FOR TREATING SUBSTRATE
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Pub. No.: WO/2018/216612 International Application No.: PCT/JP2018/019284
Publication Date: 29.11.2018 International Filing Date: 18.05.2018
IPC:
H01L 21/306 (2006.01) ,B08B 3/02 (2006.01) ,C03C 15/00 (2006.01) ,H01L 21/677 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
02
Cleaning by the force of jets or sprays
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15
Surface treatment of glass, not in the form of fibres or filaments, by etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
井谷 晶 ITANI Akira; --
Agent:
特許業務法人暁合同特許事務所 AKATSUKI UNION PATENT FIRM; 愛知県名古屋市中区栄二丁目1番1号 日土地名古屋ビル5階 5th Floor, Nittochi Nagoya Bldg., 1-1, Sakae 2-chome, Naka-ku, Nagoya-shi, Aichi 4600008, JP
Priority Data:
2017-10431226.05.2017JP
Title (EN) APPARATUS FOR TREATING SUBSTRATE
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
Abstract:
(EN) Provided is a wet etching apparatus 20 comprising: a wet etching bath 21 for supplying an etchant to a to-be-treated surface of a mother glass substrate; a cleaning bath 22 which is disposed downstream of the wet etching bath 21 to supply a cleaning solution to the to-be-treated surface of the mother glass substrate; a replacement bath 23 which is disposed between the wet etching bath 21 and the cleaning bath 22 to supply a replacement fluid for replacing the etchant to the to-be-treated surface of the mother glass substrate; and a substrate transport unit 24 which transports the mother glass substrate in order from the wet etching bath 21 to the replacement bath 23 and then the cleaning bath 22, and transports the mother glass substrate faster in the replacement bath 23 than in the wet etching bath 21 and the cleaning bath 22.
(FR) L'invention concerne un appareil de gravure humide 20 comprenant : un bain de gravure humide 21 pour fournir un agent de gravure à une surface à traiter d'un substrat de verre mère; un bain de nettoyage 22 qui est disposé en aval du bain de gravure humide 21 pour fournir une solution de nettoyage à la surface à traiter du substrat de verre mère; un bain de remplacement 23 qui est disposé entre le bain de gravure humide 21 et le bain de nettoyage 22 pour fournir un fluide de remplacement pour remplacer l'agent de gravure sur la surface à traiter du substrat de verre mère; et une unité de transport de substrat 24 qui transporte le substrat de verre mère dans l'ordre depuis le bain de gravure humide 21 jusqu'au bain de remplacement 23 , puis le bain de nettoyage 22, et transporte le substrat de verre mère plus rapidement dans le bain de remplacement 23 que dans le bain de gravure humide 21 et le bain de nettoyage 22.
(JA) ウェットエッチング装置20は、マザーガラス基板の被処理面にエッチング液を供給するウェットエッチング処理槽21と、ウェットエッチング処理槽21の下流側に配されてマザーガラス基板の被処理面に洗浄液を供給する洗浄槽22と、ウェットエッチング処理槽21と洗浄槽22との間に介在する形で配されてマザーガラス基板の被処理面にエッチング液を置換するための置換液を供給する置換槽23と、ウェットエッチング処理槽21、置換槽23及び洗浄槽22の順でマザーガラス基板を搬送し、置換槽23ではウェットエッチング処理槽21及び洗浄槽22よりマザーガラス基板を速く搬送する基板搬送部24と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)