WO2018215498 METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIOFREQUENCY CIRCUIT

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Publication Number WO/2018/215498

Publication Date 29.11.2018

International Application No. PCT/EP2018/063427

International Filing Date 23.05.2018

IPC

CPC

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Applicants

SOITEC [FR]/[FR]

Inventors

BROEKAART, Marcel
ALLIBERT, Frédéric
DESBONNET, Eric
RASKIN, Jean-Pierre
RACK, Martin

Agents

REGIMBEAU

Priority Data

1754567

23.05.2017

Publication Language English (en)

Filing Language English (EN)

Designated States

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Title

(EN) METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIOFREQUENCY CIRCUIT

(FR) PROCÉDÉ PERMETTANT DE RÉDUIRE À UN MINIMUM LA DISTORSION D'UN SIGNAL DANS UN CIRCUIT RADIOFRÉQUENCE

Abstract

(EN) The invention relates to a method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit (L) formed on a semiconductor substrate (1) coated with an electrically insulating layer (2, 2b), wherein a curve representing said distortion as a function of a power of the input or output signal exhibits a trough around a given power (P_Dip), said method being characterized in that it comprises applying, between the radiofrequency circuit (L) and the semiconductor substrate (1), an electrical potential difference (V_GB) chosen so as to move said trough towards a given operating power of the radiofrequency circuit.

(FR) L'invention se rapporte à un procédé permettant de réduire à un minimum la distorsion harmonique et/ou la distorsion d'intermodulation d'un signal radiofréquence se propageant dans un circuit radiofréquence (L) formé sur un substrat semi-conducteur (1) revêtu d'une couche électro-isolante (2, 2b), une courbe représentant ladite distorsion en fonction d'une puissance du signal d'entrée ou de sortie présentant un creux autour d'une puissance donnée (P_Dip), ledit procédé étant caractérisé en ce qu'il consiste à appliquer, entre le circuit radiofréquence (L) et le substrat semi-conducteur (1), une différence de potentiel électrique (V_GB) choisie de sorte à déplacer ledit creux vers une puissance de fonctionnement donnée du circuit radiofréquence.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71	Manufacture of specific parts of devices defined in group H01L21/7086
76	Making of isolation regions between components
762	Dielectric regions

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71	Manufacture of specific parts of devices defined in group H01L21/7086
76	Making of isolation regions between components
762	Dielectric regions

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71	Manufacture of specific parts of devices defined in group H01L21/70
76	Making of isolation regions between components
762	Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624	using semiconductor on insulator [SOI] technology

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223	Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58	Structural electrical arrangements for semiconductor devices not otherwise provided for
64	Impedance arrangements
66	High-frequency adaptations
6661	for passive devices

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23	Details of semiconductor or other solid state devices
58	Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
64	Impedance arrangements
66	High-frequency adaptations

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1. WO2018215498 - METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIOFREQUENCY CIRCUIT

H	ELECTRICITY
03	BASIC ELECTRONIC CIRCUITRY
C	MODULATION
2200	Indexing scheme relating to details of modulators or modulation methods covered by H03C
0037	Functional aspects of modulators
0079	Measures to linearise modulation or reduce distortion of modulation characteristics