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1. WO2018215498 - METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIOFREQUENCY CIRCUIT

Publication Number WO/2018/215498
Publication Date 29.11.2018
International Application No. PCT/EP2018/063427
International Filing Date 23.05.2018
IPC
H01L 21/762 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
76Making of isolation regions between components
762Dielectric regions
CPC
H01L 21/7624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
H01L 2223/6661
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6661for passive devices
H01L 23/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
64Impedance arrangements
66High-frequency adaptations
H03C 2200/0079
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
2200Indexing scheme relating to details of modulators or modulation methods covered by H03C
0037Functional aspects of modulators
0079Measures to linearise modulation or reduce distortion of modulation characteristics
H03C 7/00
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
7Modulating electromagnetic waves
Applicants
  • SOITEC [FR]/[FR]
Inventors
  • BROEKAART, Marcel
  • ALLIBERT, Frédéric
  • DESBONNET, Eric
  • RASKIN, Jean-Pierre
  • RACK, Martin
Agents
  • REGIMBEAU
Priority Data
175456723.05.2017FR
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR MINIMIZING DISTORTION OF A SIGNAL IN A RADIOFREQUENCY CIRCUIT
(FR) PROCÉDÉ PERMETTANT DE RÉDUIRE À UN MINIMUM LA DISTORSION D'UN SIGNAL DANS UN CIRCUIT RADIOFRÉQUENCE
Abstract
(EN) The invention relates to a method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit (L) formed on a semiconductor substrate (1) coated with an electrically insulating layer (2, 2b), wherein a curve representing said distortion as a function of a power of the input or output signal exhibits a trough around a given power (PDip), said method being characterized in that it comprises applying, between the radiofrequency circuit (L) and the semiconductor substrate (1), an electrical potential difference (VGB) chosen so as to move said trough towards a given operating power of the radiofrequency circuit.
(FR) L'invention se rapporte à un procédé permettant de réduire à un minimum la distorsion harmonique et/ou la distorsion d'intermodulation d'un signal radiofréquence se propageant dans un circuit radiofréquence (L) formé sur un substrat semi-conducteur (1) revêtu d'une couche électro-isolante (2, 2b), une courbe représentant ladite distorsion en fonction d'une puissance du signal d'entrée ou de sortie présentant un creux autour d'une puissance donnée (PDip), ledit procédé étant caractérisé en ce qu'il consiste à appliquer, entre le circuit radiofréquence (L) et le substrat semi-conducteur (1), une différence de potentiel électrique (VGB) choisie de sorte à déplacer ledit creux vers une puissance de fonctionnement donnée du circuit radiofréquence.
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