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1. (WO2018204785) MULTI-BIT-PER-CELL MEMORY DEVICE BASED ON THE UNIDIRECTIONAL SPIN HALL MAGNETORESISTANCE

Pub. No.:    WO/2018/204785    International Application No.:    PCT/US2018/031087
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Sat May 05 01:59:59 CEST 2018
IPC: G11C 11/15
H01L 43/08
Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventors: AVCI, Can Onur
BEACH, Geoffrey Stephen
Title: MULTI-BIT-PER-CELL MEMORY DEVICE BASED ON THE UNIDIRECTIONAL SPIN HALL MAGNETORESISTANCE
Abstract:
A multilayer structure comprising FM/NM/FM layers enhances the amplitude of the unidirectional spin Hall magnetoresi stance (USMR) thanks to an additional FM/NM layer interface. The USMR can be used to detect the in-plane magnetization direction of each FM layer perpendicular to the current injection. Detection relies on second harmonic resistance measurements driven by the USMR with possible contribution of Joule heating-induced magnetothermal effects (ANE and SSE). The four different magnetization states Formula (I) of the FM/NM/FM layers give rise to four unique resistance levels, which can be read out by a simple two-terminal electric measurement. As a result, this FM/NM/FM multilayer structure can be used in a lateral, two-terminal device to store multiple magnetic bits. Moreover, the magnetic states can be manipulated by spin-orbit torques, opening the possibility for all-electrical operation.