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1. (WO2018204709) PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF OXYGEN CONTAINING THIN FILMS

Pub. No.:    WO/2018/204709    International Application No.:    PCT/US2018/030974
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Fri May 04 01:59:59 CEST 2018
IPC: C23C 16/32
C23C 16/40
C23C 16/44
H01L 21/02
C30B 29/34
C30B 29/36
Applicants: ASM IP HOLDING B.V.
Inventors: JIA, Lingyun
PORE, Viljami, J.
TUOMINEN, Marko
KIM, Sun Ja
MADIA, Oreste
Title: PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF OXYGEN CONTAINING THIN FILMS
Abstract:
Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.