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|1. (WO2018204709) PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF OXYGEN CONTAINING THIN FILMS|
|Applicants:||ASM IP HOLDING B.V.
PORE, Viljami, J.
KIM, Sun Ja
|Title:||PLASMA ENHANCED DEPOSITION PROCESSES FOR CONTROLLED FORMATION OF OXYGEN CONTAINING THIN FILMS|
Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.