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1. (WO2018204482) METHODS OF ELECTRICALLY CONTROLLING PHOTONS USING ATOMICALLY THIN TRANSITION METAL DICHALCOGENIDE (TMDC) AND PHOTONIC DEVICES INCLUDING TMDC
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Pub. No.: WO/2018/204482 International Application No.: PCT/US2018/030626
Publication Date: 08.11.2018 International Filing Date: 02.05.2018
IPC:
G02B 6/10 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
Applicants:
NORTH CAROLINA STATE UNIVERSITY [US/US]; 1021 Main Campus Drive 2nd Floor Raleigh, North Carolina 27606, US
Inventors:
CAO, Linyou; US
YU, Yiling; US
Agent:
KWAK, Hee Jin; Myers Bigel, P.A. PO Box 37428 Raleigh, North Carolina 27627, US
Priority Data:
62/500,63603.05.2017US
Title (EN) METHODS OF ELECTRICALLY CONTROLLING PHOTONS USING ATOMICALLY THIN TRANSITION METAL DICHALCOGENIDE (TMDC) AND PHOTONIC DEVICES INCLUDING TMDC
(FR) PROCÉDÉS DE COMMANDE ÉLECTRIQUE DE PHOTONS À L'AIDE DE DICHALCOGÉNURE DE MÉTAL DE TRANSITION ATOMIQUEMENT MINCE (TMDC) ET DISPOSITIFS PHOTONIQUES COMPRENANT UN TMDC
Abstract:
(EN) Provided herein are methods of electrically controlling photons using an atomically thin transition metal dichalcogenide layer. Further, provided are photonic devices and tunable waveguides including a transition metal dichalcogenide layer. The methods may include applying an electrical field to the transition metal dichalcogenide layer. The photonic devices and tunable waveguides may further include a first electrode, a second electrode, and an insulation layer. The insulation layer may extend between the first electrode and the transition metal dichalcogenide layer thereby electrically isolating the first electrode from the transition metal dichalcogenide layer.
(FR) L'invention concerne des procédés de commande électrique de photons à l'aide d'une couche de dichalcogénure de métal de transition atomiquement mince. En outre, l'invention concerne des dispositifs photoniques et des guides d'ondes accordables comprenant une couche de dichalcogénure de métal de transition. Les procédés peuvent consister à appliquer un champ électrique à la couche de dichalcogénure de métal de transition. Les dispositifs photoniques et les guides d'ondes accordables peuvent en outre comprendre une première électrode, une seconde électrode et une couche d'isolation. La couche d'isolation peut s'étendre entre la première électrode et la couche de dichalcogénure de métal de transition, isolant ainsi électriquement la première électrode de la couche de dichalcogénure de métal de transition.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)