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1. (WO2018204180) CRYSTAL PULLING SYSTEM AND METHOD INCLUDING CRUCIBLE AND BARRIER
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Pub. No.: WO/2018/204180 International Application No.: PCT/US2018/029765
Publication Date: 08.11.2018 International Filing Date: 27.04.2018
IPC:
C30B 15/02 (2006.01) ,C30B 15/12 (2006.01) ,C30B 29/06 (2006.01) ,C30B 15/00 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
12
Double crucible methods
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
Applicants:
ZEPEDA, Salvador [US/US]; US
CORNER STAR LIMITED [CN/CN]; International Commerce Centre 1 Austin Road West Unit 1703B-1706, Level 17 Kowloon, HK
Inventors:
ZEPEDA, Salvador; US
PHILLIPS, Richard J.; US
LUERS, Christopher Vaughn; US
Agent:
MUNSELL, Michael G.; US
POLAND, Eric G.; US
SCHUTH, Richard A.; US
BUTLER, Christopher H.; US
VANDER MOLEN, Michael J.; US
KEPPEL, Nicholas A.; US
ALLEN, Derick E.; US
AMODIO, Lucas M.; US
ATKINS, Bruce T.; US
BEULICK, John S.; US
BLOCK, Zachary J.; US
BRENNAN, Patrick E.; US
BROPHY, Richard L.; US
COYLE, Patrick J.; US
FITZGERALD, Daniel M.; US
FLOREK, Erin M.; US
GOFF, Christopher M.; US
HARPER, James D.; US
HARPER, Jesse S.; US
HEINEN JR., James M.; US
HENSON, James W.; US
HILMERT, Laura J.; US
HOEKEL, Jennifer E.; US
LONGMEYER, Michael H.; US
MUELLER, Jacob R.; US
RASCHE, Patrick W.; US
REESER III, Robert B.; US
SLATER, Brian T.; US
SMELCER, Paul L.; US
SNIDER, Josh C.; US
SOOTER, Miranda M.; US
THOMAS, Mark A.; US
VANVLIET, David S.; US
WULLER, Adam R.; US
ZEE-CHENG, Brendan R.; US
ZYCHLEWICZ, William J.; US
MCCAY, Michael G.; US
MOLLER-JACOBS, Rose L.; US
VANENGELEN, Catherine E.; US
SCHNIEDERS, Kelley A.; US
TRUITT, Tracey S.; US
INACAY, Brian D.; US
BACOCH, John C.; US
KU, Deborah S.; US
SCHNEIDERJOHN, Robert L.; US
Priority Data:
15/587,00804.05.2017US
Title (EN) CRYSTAL PULLING SYSTEM AND METHOD INCLUDING CRUCIBLE AND BARRIER
(FR) SYSTÈME ET PROCÉDÉ DE TIRAGE DE CRISTAL COMPRENANT UN CREUSET ET UNE BARRIÈRE
Abstract:
(EN) A system for forming an ingot from a melt includes a first crucible defining a cavity for receiving the melt and a second crucible in the cavity. The second crucible separates an outer zone from an inner zone. The second crucible includes a passageway therethrough to allow the melt located within the outer zone to move into the inner zone. The inner zone defines a growth area for the ingot. The system also includes a barrier located within the outer zone to limit movement of the melt through the outer zone. The barrier includes members that are arranged to define a labyrinth for melt flow.
(FR) La présente invention concerne un système permettant de former un lingot à partir d'une masse fondue comprenant un premier creuset définissant une cavité destinée à recevoir la masse fondue et un second creuset dans la cavité. Le second creuset sépare une zone externe d'une zone interne. Le second creuset comporte un passage le traversant pour permettre à la masse fondue située à l'intérieur de la zone externe de se déplacer dans la zone interne. La zone interne définit une zone de croissance pour le lingot. Le système comprend également une barrière située à l'intérieur de la zone externe permettant de limiter le mouvement de la masse fondue à travers la zone externe. La barrière comprend des éléments qui sont agencés pour définir un labyrinthe pour l’écoulement de la masse fondue.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)