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1. (WO2018204017) 3D INTERCONNECT MULTI-DIE INDUCTORS WITH THROUGH-SUBSTRATE VIA CORES
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Pub. No.: WO/2018/204017 International Application No.: PCT/US2018/026269
Publication Date: 08.11.2018 International Filing Date: 05.04.2018
IPC:
H01L 49/02 (2006.01) ,H01L 23/48 (2006.01) ,H01L 25/07 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Thin-film or thick-film devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, P.O. Box 6 Boise, ID 83707-0006, US
Inventors:
KIRBY, Kyle, K.; US
Agent:
PARKER, Paul, T.; US
ARNETT, Stephen, E.; US
ARAIZA, Alberto, G.; US
AI, Bing; US
SUMEDHA, Ahuja; US
Priority Data:
15/584,96502.05.2017US
Title (EN) 3D INTERCONNECT MULTI-DIE INDUCTORS WITH THROUGH-SUBSTRATE VIA CORES
(FR) BOBINES D'INDUCTION MULTI-PUCE D'INTERCONNEXION 3D AYANT DES NOYAUX DE TROU D'INTERCONNEXION TRAVERSANT LE SUBSTRAT
Abstract:
(EN) A semiconductor device having a first die and a second die is provided. The first die of the device includes a first surface and a through-substrate via (TSV) extending at least substantially through the first die, the TSV having a portion extending past the first surface. The first die further includes a first substantially helical conductor disposed around the TSV. The second die of the device includes a second surface, an opening in the second surface in which the portion of the TSV is disposed, and a second substantially helical conductor disposed around the opening.
(FR) L'invention concerne un dispositif à semi-conducteur ayant une première puce et une seconde puce. La première puce du dispositif comprend une première surface et un trou d'interconnexion traversant le substrat (TSV) s'étendant au moins sensiblement à travers la première puce, le TSV ayant une partie s'étendant au-delà de la première surface. La première puce comprend en outre un premier conducteur sensiblement hélicoïdal disposé autour du TSV. La seconde puce du dispositif comprend une seconde surface, une ouverture dans la seconde surface dans laquelle est disposée la partie du TSV, et un second conducteur sensiblement hélicoïdal disposé autour de l'ouverture.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)