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1. (WO2018203966) DUMMY WORD LINE BIAS RAMP RATE DURING PROGRAMMING
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Pub. No.: WO/2018/203966 International Application No.: PCT/US2018/020273
Publication Date: 08.11.2018 International Filing Date: 28.02.2018
IPC:
G11C 16/32 (2006.01) ,G11C 16/10 (2006.01) ,G11C 16/08 (2006.01) ,G11C 16/04 (2006.01) ,G11C 16/34 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
32
Timing circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
10
Programming or data input circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
08
Address circuits; Decoders; Word-line control circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Applicants:
SANDISK TECHNOLOGIES LLC [US/US]; 6900 Dallas Parkway, Suite 325 Plano, Texas 75024, US
Inventors:
ZHANG, Zhengyi; US
DONG, Yingda; US
Agent:
MAGEN, Burt; US
Priority Data:
15/584,58402.05.2017US
Title (EN) DUMMY WORD LINE BIAS RAMP RATE DURING PROGRAMMING
(FR) VITESSE DE RAMPE DE BIAIS DE LIGNE DE MOTS FICTIVE PENDANT LA PROGRAMMATION
Abstract:
(EN) Apparatuses and techniques are described for reducing or eliminating program disturb in non-volatile storage. In one aspect, the ramp rate of a voltage applied to a dummy word line is reduced during programming of edge word lines. In one embodiment, a slower than normal ramp rate is used for a dummy word line when the word line selected for programming is an edge word line, but a normal ramp rate is used for the dummy word line when the word line selected for programming is a middle word line.
(FR) L'invention concerne des appareils et des techniques permettant de réduire ou d'éliminer une perturbation de programme dans un stockage non volatil. Selon un aspect, la vitesse de rampe d'une tension appliquée à une ligne de mots fictive est réduite pendant la programmation de lignes de mots de bord. Selon un mode de réalisation, une vitesse de rampe plus lente que normale est utilisée pour une ligne de mots fictive lorsque la ligne de mots sélectionnée pour la programmation est une ligne de mots de bord, mais une vitesse de rampe normale est utilisée pour la ligne de mots fictive lorsque la ligne de mots sélectionnée pour la programmation est une ligne de mots intermédiaire.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)