Search International and National Patent Collections

1. (WO2018203687) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/203687    International Application No.:    PCT/KR2018/005151
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Fri May 04 01:59:59 CEST 2018
IPC: H01L 33/10
H01L 33/58
H01L 33/22
Applicants: LG INNOTEK CO., LTD.
엘지이노텍 주식회사
Inventors: JEONG, Young Kyu
정영규
KIM, Young Hoon
김영훈
Title: SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device, according to the present invention, comprises: a substrate; a light emitting structure disposed on the substrate, the light emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an insulating layer disposed between a supporting member and the light emitting structure; a first reflective layer disposed between the insulating layer and the second conductive semiconductor layer; and a second reflective layer disposed between the insulating layer and the substrate, wherein the second reflective layer may be vertically overlapped with the light emitting structure between the first reflective layer and a side surface of the light emitting structure. The semiconductor device according to the present invention minimizes a light absorption region, and thus light extraction efficiency can be improved.