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1. (WO2018203540) RESIST UNDERLAYER FILM-FORMING COMPOSITION
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Pub. No.: WO/2018/203540 International Application No.: PCT/JP2018/017314
Publication Date: 08.11.2018 International Filing Date: 27.04.2018
IPC:
G03F 7/11 (2006.01) ,C08G 59/18 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
59
Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by reaction of epoxy polycondensates with monofunctional low-molecular-weight compounds; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
18
Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
Applicants:
日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 5-1, Nihonbashi 2-chome, Chuo-ku, Tokyo 1036119, JP
Inventors:
緒方 裕斗 OGATA, Hiroto; JP
橋本 雄人 HASHIMOTO, Yuto; JP
田村 護 TAMURA, Mamoru; JP
岸岡 高広 KISHIOKA, Takahiro; JP
Agent:
特許業務法人はなぶさ特許商標事務所 HANABUSA PATENT & TRADEMARK OFFICE; 東京都千代田区神田駿河台3丁目2番地 新御茶ノ水アーバントリニティ Shin-Ochanomizu Urban Trinity, 2, Kandasurugadai 3-chome, Chiyoda-ku, Tokyo 1010062, JP
Priority Data:
2017-09200802.05.2017JP
Title (EN) RESIST UNDERLAYER FILM-FORMING COMPOSITION
(FR) COMPOSITION FILMOGÈNE DE SOUS-COUCHE DE RÉSERVE
(JA) レジスト下層膜形成組成物
Abstract:
(EN) [Problem] To provide a resist underlayer film-forming composition that functions as an anti-reflection film during exposure, that can have recessed portions having a narrow space and a high aspect ratio embedded therein, and that is highly resistant to aqueous hydrogen peroxide. [Solution] This resist underlayer film-forming composition contains a resin, a compound represented by formula (1a) or formula (1b), and a solvent, wherein the composition contains 0.01-60 mass% of the compound represented by formula (1a) or formula (1b) with respect to the resin. (In the formulas, X represents a carbonyl group or a methylene group, l and m each independently represent an integer of 0-5 satisfying a relationship formula 3 ≤ l+m ≤ 10, and n represents an integer of 2-5.)
(FR) Le problème décrit par la présente invention est de fournir une composition filmogène de sous-couche de réserve qui sert de film antireflet pendant l'exposition, qui peut comporter des parties en retrait intégrées présentant un espace étroit et un rapport d'aspect élevé, et qui est hautement résistante au peroxyde d'hydrogène aqueux. La solution selon l'invention porte sur une composition filmogène de sous-couche de réserve qui contient une résine, un composé représenté par la formule (1a) ou (1b), et un solvant, la composition renfermant 0,01 à 60 % en masse du composé représenté par la formule (1a) ou (1b) par rapport à la résine. (Dans les formules, X représente un groupe carbonyle ou un groupe méthylène, l et m représentent chacun indépendamment un nombre entier de 0 à 5 satisfaisant une formule de relation 3 ≤ l + m ≤ 10, et n représente un nombre entier de 2 à 5.)
(JA) 【課題】露光時に反射防止膜として機能すると共に、狭スペース及び高アスペクト比の凹部を埋め込むことができ、更に過酸化水素水溶液に対する耐性に優れた、レジスト下層膜形成組成物を提供する。 【解決手段】 樹脂、下記式(1a)又は式(1b)で表される化合物、及び溶剤を含み、前記樹脂に対し、前記式(1a)又は式(1b)で表される化合物を0.01質量%乃至60質量%含有する、レジスト下層膜形成組成物。(式中、Xはカルボニル基又はメチレン基を表し、l及びmはそれぞれ独立に3≦l+m≦10の関係式を満たす0乃至5の整数を表し、nは2乃至5の整数を表す。)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)