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1. (WO2018203466) NITRIDE-BASED LIGHT EMITTING DEVICE

Pub. No.:    WO/2018/203466    International Application No.:    PCT/JP2018/015319
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Fri Apr 13 01:59:59 CEST 2018
IPC: H01S 5/024
H01S 5/323
Applicants: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
パナソニックIPマネジメント株式会社
Inventors: TAKAYAMA Toru
高山 徹
NISHIKAWA Tohru
西川 透
NAKATANI Tougo
中谷 東吾
SAMONJI Katsuya
左文字 克哉
KANO Takashi
狩野 隆司
UEDA Shinji
植田 慎治
Title: NITRIDE-BASED LIGHT EMITTING DEVICE
Abstract:
A nitride-based light emitting device (semiconductor laser device (51a)) comprises: a nitride-based semiconductor light emitting element (semiconductor laser element (11)) having a multilayer structure in which a first cladding layer (103), a first optical guide layer (105), a quantum well active layer (106), a second optical guide layer (107), and a second cladding layer (109) are laminated on an AlxGa1-xN (0 ≤ x ≤ 1) substrate (GaN substrate (101)) in the order of description from the AlxGa1-xN substrate side; and a submount substrate (122) on which the nitride-based semiconductor light emitting element is mounted. The nitride-based semiconductor light emitting element is mounted on the submount substrate (122) so that the multilayer structure faces the submount substrate (122). The submount substrate (122) is formed from diamond. In the nitride-based semiconductor light emitting element, a concave warp is formed on the AlxGa1-xN substrate side.