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|1. (WO2018203459) SELECTIVE ELEMENT AND STORAGE DEVICE|
|Applicants:||SONY SEMICONDUCTOR SOLUTIONS CORPORATION
|Title:||SELECTIVE ELEMENT AND STORAGE DEVICE|
A selective element according to one embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite to the first electrode; a semiconductor layer that is provided between the first electrode and the second electrode and that includes at least one chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S) and includes at least one first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si); and a first heat bypass layer that has higher thermal conductivity than the semiconductor layer and that is provided on at least a part of the periphery of the semiconductor layer, between the first electrode and the second electrode.