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1. (WO2018203459) SELECTIVE ELEMENT AND STORAGE DEVICE

Pub. No.:    WO/2018/203459    International Application No.:    PCT/JP2018/014717
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Sat Apr 07 01:59:59 CEST 2018
IPC: H01L 21/8239
H01L 27/105
H01L 45/00
H01L 49/00
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
ソニーセミコンダクタソリューションズ株式会社
Inventors: IKARASHI, Minoru
五十嵐 実
SONE, Takeyuki
曽根 威之
NONOGUCHI, Seiji
野々口 誠二
SEI, Hiroaki
清 宏彰
OHBA, Kazuhiro
大場 和博
Title: SELECTIVE ELEMENT AND STORAGE DEVICE
Abstract:
A selective element according to one embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite to the first electrode; a semiconductor layer that is provided between the first electrode and the second electrode and that includes at least one chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S) and includes at least one first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si); and a first heat bypass layer that has higher thermal conductivity than the semiconductor layer and that is provided on at least a part of the periphery of the semiconductor layer, between the first electrode and the second electrode.