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1. (WO2018203279) INORGANIC HOLE CONDUCTOR BASED PEROVSKITE PHOTOELECTRIC CONVERSION DEVICE WITH HIGH OPERATIONAL STABILITY AT LONG TERM
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Pub. No.: WO/2018/203279 International Application No.: PCT/IB2018/053090
Publication Date: 08.11.2018 International Filing Date: 03.05.2018
IPC:
H01L 51/42 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Applicants:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) [CH/CH]; EPFL-TTO EPFL Innovation Park J 1015 Lausanne, CH
Inventors:
ARORA, Neha; CH
DAR, Mohammad Ibrahim; CH
ZAKEERUDDIN, Shaik Mohammed; CH
GRAETZEL, Michael; CH
Agent:
GANGUILLET, Cyril; CH
Priority Data:
17169831.905.05.2017EP
Title (EN) INORGANIC HOLE CONDUCTOR BASED PEROVSKITE PHOTOELECTRIC CONVERSION DEVICE WITH HIGH OPERATIONAL STABILITY AT LONG TERM
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE DE PÉROVSKITE BASÉ SUR UN CONDUCTEUR DE TROU INORGANIQUE AYANT UNE STABILITÉ FONCTIONNELLE ÉLEVÉE À LONG TERME
Abstract:
(EN) The invention relates to an optoelectronic and/or photoelectrochemical device comprising a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer comprises a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and comprises an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and comprises a material being different from the inorganic hole transporting material and the material of the back contact.
(FR) La présente invention concerne un dispositif optoélectronique et/ou photoélectrochimique comprenant une couche de support conductrice, un semi-conducteur de type n, une couche de sensibilisation ou d'absorption de lumière, une couche de transport de trous, une couche d'espacement et un contact arrière, le semi-conducteur de type n étant en contact avec la couche de sensibilisation ou d'absorption de lumière, la couche de sensibilisation ou d'absorption de lumière comprenant un matériau de pérovskite ou de pérovskite d'halogénure de métal, la couche de transport de trous étant en contact direct avec la couche de sensibilisation ou d'absorption de lumière et comprenant un matériau de transport de trous inorganique ou un semi-conducteur de type p inorganique, la couche d'espacement se trouvant entre la couche de transport de trous et le contact arrière et comprenant un matériau différent du matériau de transport de trous inorganique et du matériau du contact arrière.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)