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1. WO2018203279 - INORGANIC HOLE CONDUCTOR BASED PEROVSKITE PHOTOELECTRIC CONVERSION DEVICE WITH HIGH OPERATIONAL STABILITY AT LONG TERM

Publication Number WO/2018/203279
Publication Date 08.11.2018
International Application No. PCT/IB2018/053090
International Filing Date 03.05.2018
IPC
H01L 51/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
H01L 2251/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
301Inorganic materials
303Oxides, e.g. metal oxides
305Transparent conductive oxides [TCO]
308composed of indium oxides, e.g. ITO
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0077Coordination compounds, e.g. porphyrin
0083Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
H01L 51/0084
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0077Coordination compounds, e.g. porphyrin
0084Transition metal complexes, e.g. Ru(II)polypyridine complexes
H01L 51/0089
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0077Coordination compounds, e.g. porphyrin
0089Metal complexes comprising Lanthanides or Actinides, e.g. Eu
H01L 51/0091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0077Coordination compounds, e.g. porphyrin
0091Metal complexes comprising a IB-metal (Cu, Ag, Au)
Applicants
  • ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) [CH]/[CH]
Inventors
  • ARORA, Neha
  • DAR, Mohammad Ibrahim
  • ZAKEERUDDIN, Shaik Mohammed
  • GRAETZEL, Michael
Agents
  • GANGUILLET, Cyril
Priority Data
17169831.905.05.2017EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INORGANIC HOLE CONDUCTOR BASED PEROVSKITE PHOTOELECTRIC CONVERSION DEVICE WITH HIGH OPERATIONAL STABILITY AT LONG TERM
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE DE PÉROVSKITE BASÉ SUR UN CONDUCTEUR DE TROU INORGANIQUE AYANT UNE STABILITÉ FONCTIONNELLE ÉLEVÉE À LONG TERME
Abstract
(EN)
The invention relates to an optoelectronic and/or photoelectrochemical device comprising a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer comprises a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and comprises an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and comprises a material being different from the inorganic hole transporting material and the material of the back contact.
(FR)
La présente invention concerne un dispositif optoélectronique et/ou photoélectrochimique comprenant une couche de support conductrice, un semi-conducteur de type n, une couche de sensibilisation ou d'absorption de lumière, une couche de transport de trous, une couche d'espacement et un contact arrière, le semi-conducteur de type n étant en contact avec la couche de sensibilisation ou d'absorption de lumière, la couche de sensibilisation ou d'absorption de lumière comprenant un matériau de pérovskite ou de pérovskite d'halogénure de métal, la couche de transport de trous étant en contact direct avec la couche de sensibilisation ou d'absorption de lumière et comprenant un matériau de transport de trous inorganique ou un semi-conducteur de type p inorganique, la couche d'espacement se trouvant entre la couche de transport de trous et le contact arrière et comprenant un matériau différent du matériau de transport de trous inorganique et du matériau du contact arrière.
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