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1. (WO2018202615) RESIN ENCAPSULATED POWER SEMICONDUCTOR MODULE WITH EXPOSED TERMINAL AREAS

Pub. No.:    WO/2018/202615    International Application No.:    PCT/EP2018/061017
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Tue May 01 01:59:59 CEST 2018
IPC: H01L 23/31
H01L 23/473
H01L 25/11
Applicants: ABB SCHWEIZ AG
AUDI AG
Inventors: MOHN, Fabian
Title: RESIN ENCAPSULATED POWER SEMICONDUCTOR MODULE WITH EXPOSED TERMINAL AREAS
Abstract:
A power semiconductor module (10) comprises a substrate (12) with a metallization layer (18); at least one power semiconductor chip (14) bonded to the substrate (12); and a mold encapsulation (26) partially encapsulating the semiconductor chip (14) and the substrate 5 (12); wherein the mold encapsulation (26) comprises at least one window (36) exposing a terminal area (38, 40) of the metallization layer (18); and wherein a border part (34) of the mold encapsulation (26) between the window (36) and a border (28) of the substrate (12) has a height over the substrate smaller than a maximal height of a central part (32) of the mold encapsulation (26).10