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1. (WO2018201796) PIXEL CIRCUIT STRUCTURE AND DISPLAY DEVICE USING SAME

Pub. No.:    WO/2018/201796    International Application No.:    PCT/CN2018/078478
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Fri Mar 09 00:59:59 CET 2018
IPC: H01L 27/32
H01L 51/56
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors: XIAO, Li
肖丽
XUAN, Minghua
玄明花
CHEN, Xiaochuan
陈小川
YANG, Shengji
杨盛际
LIU, Dongni
刘冬妮
FU, Jie
付杰
WANG, Lei
王磊
LU, Pengcheng
卢鹏程
Title: PIXEL CIRCUIT STRUCTURE AND DISPLAY DEVICE USING SAME
Abstract:
A pixel circuit structure and a display device using the same. The pixel circuit structure comprises: a metal shielding layer; at least one buffer layer formed on the metal shielding layer; a thin film transistor formed on the at least one buffer layer; an insulating layer formed on a gate electrode of the thin film transistor; and a second gate electrode which is formed on the insulating layer and which forms a storage capacitor with the gate electrode, the second gate electrode being connected to a power wire of the thin film transistor, and the metal shielding layer being electrically connected to the power wire of the thin film transistor. By means of the electrical connection between the metal shielding layer and the power wire of the thin film transistor, the metal shielding layer and the power wire are connected in parallel, the resistance of the power wire is reduced, the panel load is reduced, and the resistance voltage IR drop is decreased; meanwhile, the storage capacitor C st is increased.