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|1. (WO2018201781) THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE|
|Applicants:||BOE TECHNOLOGY GROUP CO. , LTD.
CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO. , LTD.
|Title:||THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE|
A thin film transistor, an array substrate, and a display device, which relate to the technical field of display and which may improve the aperture ratio of sub-pixel units given a fixed ratio of length to width for channels when applied in the field of display. The thin film transistor comprises a gate electrode (10), an active layer (20), a source electrode (31), and a drain electrode (32). The source electrode comprises a connection portion (30), as well as a first sub-portion (311), a second sub-portion (312), and a third sub-portion (313) that are arranged sequentially and in parallel. At first ends of the sub-portions, the connection portion is connected to the first sub-portion, the second sub-portion, and the third sub-portion to form two adjacent recesses. At second ends of the sub-portions, the distance from the end of the second sub-portion to the connection portion is shorter than the distance from the end of the first sub-portion and from the end of the third sub-portion to the connection portion. The drain electrode comprises a connection block (300), and a first drain electrode (321) and a second drain electrode (322) disposed in the two recesses respectively, at least a part of the connection block being disposed between the first drain electrode and the second drain electrode so as to connect the first drain electrode and the second drain electrode.