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1. (WO2018201721) ENHANCED HFET

Pub. No.:    WO/2018/201721    International Application No.:    PCT/CN2017/115427
Publication Date: Fri Nov 09 00:59:59 CET 2018 International Filing Date: Tue Dec 12 00:59:59 CET 2017
IPC: H01L 29/778
H01L 29/06
H01L 29/423
Applicants: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
中国电子科技集团公司第十三研究所
Inventors: WANG, Yuangang
王元刚
FENG, Zhihong
冯志红
LV, Yuanjie
吕元杰
TAN, Xin
谭鑫
SONG, Xubo
宋旭波
ZHOU, Xingye
周幸叶
FANG, Yulong
房玉龙
GU, Guodong
顾国栋
GUO, Hongyu
郭红雨
CAI, Shujun
蔡树军
Title: ENHANCED HFET
Abstract:
An enhanced HFET, comprising a HFET device body. Regions without two-dimensional electron gas are provided on a channel layer (2) at the portion between a drain electrode (6) and a source electrode (4) of the HFET device body, and there is a region without two-dimensional electron gas provided on the channel layer (2) at the portions excluding the area under a gate electrode (5); two-dimensional electron gas regions are provided on the channel layer (2) excluding the portions located between the drain electrode (6) and the source electrode (4) and provided with the regions without two-dimensional electron gas; the channel layer (2) at the portion between the gate electrode (5) and the source electrode (4) and the portion between the gate electrode (5) and the drain electrode (6) are each provided with a two-dimensional electron gas region; and two-dimensional electron gas (8) is provided at a portion or whole portion of a two-dimensional electron gas layer at the channel layer (2) at the portion right under the gate electrode (5). The HFET has the advantages of high saturation current, high threshold voltage controllability, fast response, low energy consumption, and the like.