Search International and National Patent Collections
|1. (WO2018201721) ENHANCED HFET|
|Applicants:||THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
An enhanced HFET, comprising a HFET device body. Regions without two-dimensional electron gas are provided on a channel layer (2) at the portion between a drain electrode (6) and a source electrode (4) of the HFET device body, and there is a region without two-dimensional electron gas provided on the channel layer (2) at the portions excluding the area under a gate electrode (5); two-dimensional electron gas regions are provided on the channel layer (2) excluding the portions located between the drain electrode (6) and the source electrode (4) and provided with the regions without two-dimensional electron gas; the channel layer (2) at the portion between the gate electrode (5) and the source electrode (4) and the portion between the gate electrode (5) and the drain electrode (6) are each provided with a two-dimensional electron gas region; and two-dimensional electron gas (8) is provided at a portion or whole portion of a two-dimensional electron gas layer at the channel layer (2) at the portion right under the gate electrode (5). The HFET has the advantages of high saturation current, high threshold voltage controllability, fast response, low energy consumption, and the like.