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1. (WO2018200693) IMPROVED CURRENT SENSING FOR INTEGRATED CIRCUIT DEVICES
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Pub. No.: WO/2018/200693 International Application No.: PCT/US2018/029389
Publication Date: 01.11.2018 International Filing Date: 25.04.2018
IPC:
G05F 3/26 (2006.01) ,G01R 19/00 (2006.01) ,H01L 29/78 (2006.01)
G PHYSICS
05
CONTROLLING; REGULATING
F
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3
Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02
Regulating voltage or current
08
wherein the variable is dc
10
using uncontrolled devices with non-linear characteristics
16
being semiconductor devices
20
using diode-transistor combinations
26
Current mirrors
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
19
Arrangements for measuring currents or voltages or for indicating presence or sign thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
MICROCHIP TECHNOLOGY INCORPORATED [US/US]; 2355 West Chandler Blvd. Chandler, Arizona 85224-6199, US
Inventors:
DIX, Gregory; US
DEVAL, Philippe; CH
Agent:
SLAYDEN, Bruce W., II; US
Priority Data:
15/960,84824.04.2018US
62/490,96327.04.2017US
Title (EN) IMPROVED CURRENT SENSING FOR INTEGRATED CIRCUIT DEVICES
(FR) DÉTECTION DE COURANT AMÉLIORÉE POUR DISPOSITIFS DE TYPE CIRCUIT INTÉGRÉ
Abstract:
(EN) An integrated circuit device for controlling and sensing electrical current is provided. The integrated circuit device comprises a main transistor device, configured for controlling a main current, and a plurality of sensing transistor devices, configured for controlling a combined sensing current. The main transistor device and the plurality of sensing transistor devices are connected to a common gate node. The on-state resistance of the main transistor device is lower than a combined on-state resistance of the plurality of sensing transistor devices. The sensing transistor devices are distributed throughout at least a section of the integrated circuit to reduce an influence of at least one local property of the integrated circuit device on the combined sensing current.
(FR) L'invention concerne un dispositif de type circuit intégré servant à réguler et détecter un courant électrique. Le dispositif de type circuit intégré comprend un dispositif de type transistor principal, conçu pour réguler un courant principal, et une pluralité de dispositifs de type transistor de détection, conçus pour réguler un courant de détection combiné. Le dispositif de type transistor principal et la pluralité de dispositifs de type transistor de détection sont connectés à un nœud de porte commun. La résistance à l'état passant du dispositif de type transistor principal est inférieure à une résistance à l'état passant combinée de la pluralité de dispositifs de type transistor de détection. Les dispositifs de type transistor de détection sont répartis dans au moins une section du circuit intégré pour réduire une influence d'au moins une propriété locale du dispositif de type circuit intégré sur le courant de détection combiné.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)