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1. (WO2018200288) EUV PHOTOPATTERNING AND SELECTIVE DEPOSITION FOR NEGATIVE PATTERN MASK

Pub. No.:    WO/2018/200288    International Application No.:    PCT/US2018/028192
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Thu Apr 19 01:59:59 CEST 2018
IPC: G03F 7/20
H01L 21/027
H01L 21/02
H01L 21/033
Applicants: LAM RESEARCH CORPORATION
Inventors: SMITH, David Charles
MAHOROWALA, Arpan
Title: EUV PHOTOPATTERNING AND SELECTIVE DEPOSITION FOR NEGATIVE PATTERN MASK
Abstract:
Process and apparatus for forming a negative patterning mask in the context of EUV patterning uses a selective deposition process to deposit a metal oxide or metal nitride thin film in a feature defined in an EUV resist to prepare a negative image for patterning. The method to produce the "negative" image does not involve an etch back step and therefore accommodates the small resist budget. The material forming the "negative" image is significantly more etch resistant than resist which eliminates the need for an additional hard mask transfer layer.