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1. (WO2018199582) SUBSTRATE-PROCESSING APPARATUS
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Pub. No.: WO/2018/199582 International Application No.: PCT/KR2018/004708
Publication Date: 01.11.2018 International Filing Date: 24.04.2018
IPC:
H01L 21/02 (2006.01) ,H01J 37/32 (2006.01) ,H01L 21/205 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
주성엔지니어링(주) JUSUNG ENGINEERING CO., LTD. [KR/KR]; 경기도 광주시 오포읍 오포로 240 240, Opo-ro, Opo-eup Gwangju-si Gyeonggi-do 12773, KR
Inventors:
유광수 YOO, Kwang Su; KR
박특기 PARK, Teugki; KR
이용현 LEE, Yong Hyun; KR
정철우 CHONG, Cheol Woo; KR
Agent:
특허법인 누리 NURY PATENT LAW FIRM; 서울시 강남구 테헤란로 25길 15-5, 4층 4F, 15-5, Teheran-ro 25-gil Gangnam-gu Seoul 06131, KR
Priority Data:
10-2017-005244724.04.2017KR
Title (EN) SUBSTRATE-PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT
(KO) 기판 처리 장치
Abstract:
(EN) An apparatus for processing a capacitively coupled plasma substrate according to an embodiment of the present invention comprises: a process chamber which provides a vacuum-evacuated and sealed inner space; a gas inlet pipe connected to the process chamber so as to supply a process gas to the inside of the process chamber; a gas distribution part connected to the gas inlet pipe so as to inject the process gas introduced into the gas inlet pipe into the inner space; an impedance matching network which is disposed outside the process chamber, and which delivers RF power of an RF power supply to the gas distribution part; an RF connection line for connecting an output of the impedance matching network to the gas inlet pipe or the gas distribution part; and a shield plate which includes a ferromagnetic body, and through which at least one from among the RF connection line and the gas inlet pipe passes.
(FR) Un appareil permettant de traiter un substrat de plasma couplé de manière capacitive selon un mode de réalisation de la présente invention comprend : une chambre de traitement qui fournit un espace interne sous vide et scellé ; un tuyau d'entrée de gaz relié à la chambre de traitement de façon à fournir un gaz de traitement à l'intérieur de la chambre de traitement ; une partie de distribution de gaz reliée au tuyau d'entrée de gaz de façon à injecter le gaz de traitement introduit dans le tuyau d'entrée de gaz dans l'espace interne ; un réseau d'adaptation d'impédance qui est disposé à l'extérieur de la chambre de traitement, et qui délivre une puissance RF d'une alimentation électrique RF à la partie de distribution de gaz ; une ligne de connexion RF permettant de connecter une sortie du réseau d'adaptation d'impédance au tuyau d'entrée de gaz ou à la partie de distribution de gaz ; et une plaque de blindage qui comprend un corps ferromagnétique, et à travers laquelle passe la ligne de connexion RF et/ou le tuyau d'entrée de gaz.
(KO) 본 발명의 일 실시예에 따른 축전 결합 플라즈마 기판 처리 장치는, 진공으로 배기되고 밀폐된 내부 공간을 제공하는 공정 챔버; 공정 가스를 상기 공정 챔버의 내부에 공급하기 위하여 상기 공정 챔버에 연결되는 가스 유입관; 상기 가스 유입관에 연결되어 상기 내부 공간에 상기 가스 유입관으로 유입된 공정 가스를 분사하는 가스 분배부; 상기 공정 챔버의 외부에 배치되고 RF 전원의 RF 전력을 상기 가스 분배부에 전달하는 임피던스 매칭 네트워크; 상기 임피던스 매칭 네트워크의 출력을 상기 가스 유입관 또는 상기 가스 분배부에 연결하는 RF 연결 라인; 및 상기 RF 연결 라인과 상기 가스 유입관 중 적어도 하나 이상이 관통하도록 구성되며, 강자성체를 포함하는 차폐판;을 포함한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)