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1. (WO2018199553) COMPOUND SEMICONDUCTOR SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
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Pub. No.: WO/2018/199553 International Application No.: PCT/KR2018/004569
Publication Date: 01.11.2018 International Filing Date: 19.04.2018
IPC:
H01L 31/18 (2006.01) ,H01L 31/06 (2006.01) ,H01L 31/0272 (2006.01) ,H01L 31/0304 (2006.01)
[IPC code unknown for H01L 31/18][IPC code unknown for H01L 31/06][IPC code unknown for H01L 31/0272][IPC code unknown for H01L 31/0304]
Applicants:
LG ELECTRONICS INC. [KR/KR]; 128, Yeoui-daero, Yeongdeungpo-gu, Seoul 07336, KR
Inventors:
CHOI, Wonseok; KR
KIM, Gunho; KR
Agent:
ROYAL PATENT & LAW OFFICE; FL. 4 SEOIL Bldg., 104, Banpo-daero, Seocho-gu, Seoul 06648, KR
Priority Data:
10-2017-005252024.04.2017KR
Title (EN) COMPOUND SEMICONDUCTOR SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
(FR) CELLULE SOLAIRE À SEMI-CONDUCTEUR COMPOSITE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) Disclosed is a method of manufacturing a compound semiconductor solar cell according to an embodiment of the invention. The method of manufacturing the compound semiconductor solar cell according to the embodiment of the invention includes forming a plurality of compound semiconductor layers of at least two elements and including a base layer and an emitter layer, the base layer including a first conductivity type dopant to have a first conductivity type and the emitter layer including a second conductivity type dopant to have a second conductivity type. The forming of the plurality of compound semiconductor layers includes at least one of a process-temperature change period and a growth-rate change period.
(FR) L'invention concerne un procédé de fabrication d'une cellule solaire à semi-conducteur composite selon un mode de réalisation de l'invention. Le procédé de fabrication de la cellule solaire à semi-conducteur composite selon le mode de réalisation de l'invention comprend la formation d'une pluralité de couches semi-conductrices composites d'au moins deux éléments et comprenant une couche de base et une couche émettrice, la couche de base comprenant un dopant de premier type de conductivité pour avoir un premier type de conductivité et la couche émettrice comprenant un dopant de second type de conductivité pour avoir un second type de conductivité. La formation de la pluralité de couches semi-conductrices composites comprend au moins une période de changement de température de traitement et/ou une période de changement de taux de croissance.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)