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1. (WO2018199259) SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/199259    International Application No.:    PCT/JP2018/017062
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Fri Apr 27 01:59:59 CEST 2018
IPC: H01L 21/52
B23K 1/00
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: TATSUMI, Hiroaki
巽 裕章
Title: SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A bonding material that contains first particles containing a first metal, second particles containing a second metal that has a lower melting point than the first metal, and a filling resin is supplied onto one of a semiconductor element and a conductor member, and a gap is formed in the surface of the supplied bonding material. The other of the conductor member and the semiconductor element is mounted on and pressed against the bonding material in which the gap was formed, the filling resin that was unevenly distributed on the surface of the bonding material is moved to the gap, and heating is performed at a bonding temperature. As a result, uneven distribution of the filling resin is suppressed, and it is possible to reliably bond the semiconductor element and the conductor member using a coupled structure in which the first particles are joined to each other by an intermetallic compound containing the first metal and the second metal, making it possible to obtain a semiconductor device having high bonding reliability.