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1. (WO2018199060) CERAMIC CIRCUIT BOARD, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND MODULE USING CERAMIC CIRCUIT BOARD
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Pub. No.: WO/2018/199060 International Application No.: PCT/JP2018/016540
Publication Date: 01.11.2018 International Filing Date: 24.04.2018
IPC:
H01L 23/36 (2006.01) ,H01L 23/12 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
Applicants:
デンカ株式会社 DENKA COMPANY LIMITED [JP/JP]; 東京都中央区日本橋室町二丁目1番1号 1-1, Nihonbashi-Muromachi 2-chome, Chuo-ku, Tokyo 1038338, JP
Inventors:
原田 祐作 HARADA Yusaku; JP
湯浅 晃正 YUASA Akimasa; JP
中村 貴裕 NAKAMURA Takahiro; JP
森田 周平 MORITA Shuhei; JP
西村 浩二 NISHIMURA Kouji; JP
Agent:
園田・小林特許業務法人 SONODA & KOBAYASHI INTELLECTUAL PROPERTY LAW; 東京都新宿区西新宿二丁目1番1号 新宿三井ビル34階 34th Floor, Shinjuku Mitsui Building, 1-1, Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo 1630434, JP
Priority Data:
2017-08650425.04.2017JP
Title (EN) CERAMIC CIRCUIT BOARD, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND MODULE USING CERAMIC CIRCUIT BOARD
(FR) CARTE DE CIRCUIT CÉRAMIQUE, PROCÉDÉ DE FABRICATION DE CARTE DE CIRCUIT CÉRAMIQUE, ET MODULE UTILISANT UNE CARTE DE CIRCUIT CÉRAMIQUE
(JA) セラミックス回路基板及びその製造方法とそれを用いたモジュール
Abstract:
(EN) [Problem] To provide a ceramic circuit board and a power module with outstanding heat resistance cycle properties. [Solution] Provided is a ceramic circuit board, formed by a ceramic substrate and a copper plate being bonded via a brazing filler material that contains silver, copper, and an active metal, wherein the bonding void ratio is 1.0% or less and the diffusion distance of the silver as a constituent of the brazing filler material is 5–20 µm. Also provided is a method for manufacturing the ceramic circuit board, characterized in that: the heating time in the 400–700°C temperature range during a step in which the temperature is raised to a bonding temperature is 5–30 minutes; and bonding is performed by maintaining a bonding temperature of 720–800°C for 5–30 minutes.
(FR) Le but de la présente invention est de fournir une carte de circuit céramique et un module de puissance présentant des propriétés exceptionnelles de cycle de résistance à la chaleur. La solution selon l'invention porte sur une carte de circuit céramique, formée par un substrat en céramique et une plaque de cuivre qui est liée par l'intermédiaire d'un matériau de charge de brasage qui contient de l'argent, du cuivre, et un métal actif, le rapport de vide de liaison étant de 1,0 % ou moins et la distance de diffusion de l'argent en tant que constituant du matériau de charge de brasage étant de 5 à 20 µm. L'invention concerne également un procédé de fabrication de la carte de circuit céramique, caractérisé en ce que : le temps de chauffage dans la plage de température de 400 à 700 °C pendant une étape dans laquelle la température est augmentée jusqu'à une température de liaison est de 5 à 30 minutes; et la liaison est réalisée en maintenant une température de liaison de 720 à 800 °C pendant 5 à 30 minutes.
(JA) 【課題】 耐熱サイクル特性に優れたセラミックス回路基板及びパワーモジュールを提供する。 【解決手段】 セラミックス基板と銅板が、Ag、Cu及び活性金属を含むろう材を介して接合してなるセラミックス回路基板において、接合ボイド率が1.0%以下であり、ろう材成分であるAgの拡散距離が5~20μmであるセラミックス回路基板とする。接合温度への昇温過程における400℃~700℃の温度域での加熱時間が5~30分であり、接合温度720~800℃で5~30分保持して接合することを特徴とするセラミックス回路基板の製造方法とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)