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|1. (WO2018199037) ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD THERFOR|
|Applicants:||SHARP KABUSHIKI KAISHA
|Title:||ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD THERFOR|
An active matrix substrate according to an embodiment of the present invention is provided with a plurality of first TFTs provided in a non-display region, and a peripheral circuit including the plurality of first TFTs. Each of the first TFTs includes an oxide semiconductor layer. The active matrix substrate is provided with a gate metal layer, a first insulation layer located on the gate metal layer, a source metal layer located on the first insulation layer, a second insulation layer located on the oxide semiconductor layer and the source metal layer, a first transparent conductive layer located on the second insulation layer, a third insulation layer located on the first transparent conductive layer, and a second transparent conductive layer located on the third insulation layer. The second insulation layer includes a channel length definition part having a pair of edges that align with a source contact region-side end and a drain contact region-side end of a channel region of the oxide semiconductor layer. One of a source electrode and a drain electrode of the first TFT is a first transparent electrode included in the first transparent conductive layer, and the other is a second transparent electrode included in the second transparent conductive layer.