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1. (WO2018199037) ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD THERFOR

Pub. No.:    WO/2018/199037    International Application No.:    PCT/JP2018/016489
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Tue Apr 24 01:59:59 CEST 2018
IPC: G09F 9/30
G02F 1/1368
G09F 9/00
H01L 21/336
H01L 21/8234
H01L 21/8236
H01L 27/088
H01L 29/786
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: MURASHIGE Shogo
村重 正悟
TAKEDA Yujiro
武田 悠二郎
ODA Akihiro
織田 明博
MATSUKIZONO Hiroshi
松木薗 広志
TANAKA Kohhei
田中 耕平
Title: ACTIVE MATRIX SUBSTRATE AND MANUFACTURING METHOD THERFOR
Abstract:
An active matrix substrate according to an embodiment of the present invention is provided with a plurality of first TFTs provided in a non-display region, and a peripheral circuit including the plurality of first TFTs. Each of the first TFTs includes an oxide semiconductor layer. The active matrix substrate is provided with a gate metal layer, a first insulation layer located on the gate metal layer, a source metal layer located on the first insulation layer, a second insulation layer located on the oxide semiconductor layer and the source metal layer, a first transparent conductive layer located on the second insulation layer, a third insulation layer located on the first transparent conductive layer, and a second transparent conductive layer located on the third insulation layer. The second insulation layer includes a channel length definition part having a pair of edges that align with a source contact region-side end and a drain contact region-side end of a channel region of the oxide semiconductor layer. One of a source electrode and a drain electrode of the first TFT is a first transparent electrode included in the first transparent conductive layer, and the other is a second transparent electrode included in the second transparent conductive layer.