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1. (WO2018198885) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
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Pub. No.: WO/2018/198885 International Application No.: PCT/JP2018/015896
Publication Date: 01.11.2018 International Filing Date: 17.04.2018
IPC:
H01L 21/304 (2006.01) ,H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る四丁目天神北町1番地の1 1-1, Tenjinkita-machi, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
辻川 裕貴 TSUJIKAWA, Hiroki; JP
田中 眞人 TANAKA, Masato; JP
奥村 剛 OKUMURA, Tsuyoshi; JP
三浦 淳靖 MIURA, Atsuyasu; JP
▲高▼岡 誠 TAKAOKA, Makoto; JP
宮路 信行 MIYAJI, Nobuyuki; JP
藤田 和宏 FUJITA, Kazuhiro; JP
澤崎 尚樹 SAWAZAKI, Naoki; JP
秋山 剛志 AKIYAMA, Takashi; JP
土橋 裕也 TSUCHIHASHI, Yuya; JP
Agent:
特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS; 大阪府大阪市中央区南本町二丁目6番12号 サンマリオンNBFタワー21階 Sun Mullion NBF Tower, 21st Floor, 6-12, Minamihommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410054, JP
Priority Data:
2017-09026428.04.2017JP
Title (EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract:
(EN) A substrate processing method includes a liquid discharge step for discharging a liquid from a nozzle facing a prescribed supply region on a main surface of a substrate held by a substrate-holding unit inside a chamber, a humidified gas supply step for supplying humidified gas having a higher humidity than that within the chamber to the main surface of the substrate in order to remove a charge that has been charged in the substrate, and a spin drying step for shaking off a liquid component of the main surface of the substrate by rotating the substrate around a prescribed rotation axis line after the liquid discharge step. The humidified gas supply step starts from before the start of the liquid discharge step, and ends at a prescribed end timing after the start of the liquid discharging step and before the spin drying step.
(FR) La présente invention concerne un procédé de traitement de substrat comprenant : une étape d'évacuation de liquide consistant à évacuer un liquide par une buse orientée vers une région d'alimentation prescrite sur une surface principale d'un substrat maintenu par une unité de maintien de substrat dans une chambre; une étape d'alimentation en gaz humidifié consistant à fournir un gaz humidifié, dont l'humidité est plus élevée que l'humidité à l'intérieur de la chambre, sur la surface principale du substrat afin d'éliminer une charge qui a été chargée dans le substrat; et une étape de séchage par centrifugation consistant à éliminer par agitation un constituant liquide de la surface principale du substrat en mettant le substrat en rotation autour d'une ligne d'axe de rotation prescrite après l'étape d'évacuation de liquide. L'étape d'alimentation en gaz humidifié commence au début de l'étape d'évacuation de liquide et se termine à un temps de fin prescrit après le début de l'étape d'évacuation de liquide et avant l'étape de séchage par centrifugation.
(JA) 基板処理方法が、チャンバー内において基板保持ユニットに保持されている基板の主面における所定の供給領域に向けてノズルから液体を吐出する液体吐出工程と、前記基板に帯電している電荷を除去するために、前記基板の主面に、前記チャンバー内の湿度よりも高湿度の加湿気体を供給する加湿気体供給工程と、前記液体吐出工程の後に、前記基板を所定の回転軸線回りに回転させて当該基板の主面の液成分を振り切るスピンドライ工程とを含む。前記加湿気体供給工程が、前記液体吐出工程の開始前から開始し、前記液体吐出工程の開始よりも後でかつ前記スピンドライ工程の前の所定の終了タイミングにおいて終了する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)