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1. (WO2018198747) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/198747    International Application No.:    PCT/JP2018/014994
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Wed Apr 11 01:59:59 CEST 2018
IPC: H01L 25/07
H01L 21/52
H01L 21/60
H01L 25/18
Applicants: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
株式会社 日立パワーデバイス
Inventors: KONNO Akitoyo
紺野 哲豊
Title: SEMICONDUCTOR DEVICE
Abstract:
Provided is a semiconductor device allowing the reliability of the junction between a power semiconductor chip and a wiring to be improved. The semiconductor device comprises: a power semiconductor chip; an insulated substrate having a circuit wiring pattern and joined to the power semiconductor chip via a first joining layer; a layered metal plate joined to a surface electrode of the power semiconductor chip via a second joining layer; a wire joined to the layered metal plate; and a heat dissipation base whereto the insulated substrate is joined. The layered metal plate is formed by layering a first metal layer, and a third metal layer, with a second metal layer sandwiched therebetween. The second metal layer is thicker than the first metal layer and the third metal layer, and has a smaller thermal expansion coefficient than those of the first metal layer and the third metal layer.