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1. (WO2018198663) n-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, n-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFER
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Pub. No.: WO/2018/198663 International Application No.: PCT/JP2018/013362
Publication Date: 01.11.2018 International Filing Date: 29.03.2018
IPC:
C30B 29/06 (2006.01) ,C30B 15/20 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 1-2-1, Shibaura, Minato-ku, Tokyo 1058634, JP
Inventors:
前川 浩一 MAEGAWA Koichi; JP
鳴嶋 康人 NARUSHIMA Yasuhito; JP
川上 泰史 KAWAKAMI Yasufumi; JP
小川 福生 OGAWA Fukuo; JP
堤 有二 TSUTSUMI Yuuji; JP
Agent:
特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES; 東京都杉並区荻窪五丁目26番13号 3階 3rd Floor, 26-13, Ogikubo 5-chome, Suginami-ku, Tokyo 1670051, JP
Priority Data:
2017-08653125.04.2017JP
Title (EN) n-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, n-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFER
(FR) PROCÉDÉ DE PRODUCTION DE MONOCRISTAL DE SILICIUM DE TYPE n, LINGOT MONOCRISTALLIN DE SILICIUM DE TYPE n, TRANCHE DE SILICIUM ET TRANCHE DE SILICIUM ÉPITAXIAL
(JA) n型シリコン単結晶の製造方法、n型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
Abstract:
(EN) An n-type silicon single crystal production method in which a silicon single crystal is grown by the Czochralski process by being drawn upward from a silicon melt that includes red phosphorus as a principal dopant. The electrical resistivity at the starting point of a body portion of the silicon single crystal is controlled to 0.80–1.05 mΩcm, and then, as the silicon single crystal is grown by being drawn upward, the electrical resistivity of the silicon single crystal is gradually reduced, and the electrical resistivity of a portion of the silicon single crystal is made to be at least 0.5 mΩcm but less than 0.6 mΩcm.
(FR) L'invention concerne un procédé de production de monocristal de silicium de type n, dans lequel on fait croître un monocristal de silicium par le procédé de Czochralski par son tirage vers le haut à partir d'une masse fondue de silicium qui comprend du phosphore rouge comme dopant principal. La résistivité électrique au point de départ d'une partie du corps du monocristal de silicium est régulée de 0,80-1,05 mΩcm puis, lorsqu'on fait croître le monocristal de silicium par son tirage vers le haut, la résistivité électrique du monocristal de silicium est progressivement réduite et la résistivité électrique d'une partie du monocristal de silicium est amenée à valoir au moins 0,5 mΩcm mais moins de 0,6 mΩcm.
(JA) 赤リンを主たるドーパントとして含むシリコン融液から、チョクラルスキー法によりシリコン単結晶を引き上げて成長させるn型シリコン単結晶の製造方法は、シリコン単結晶の直胴部開始位置における電気抵抗率を、0.80mΩcm以上、1.05mΩcm以下に制御し、その後、シリコン単結晶を引き上げて成長させるにつれて、順次シリコン単結晶の電気抵抗率を下げていき、シリコン単結晶の一部の電気抵抗率を、0.5mΩcm以上、0.6mΩcm未満とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)