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1. (WO2018198606) N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFER
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Pub. No.: WO/2018/198606 International Application No.: PCT/JP2018/011125
Publication Date: 01.11.2018 International Filing Date: 20.03.2018
IPC:
C30B 29/06 (2006.01) ,C30B 15/04 (2006.01) ,C30B 15/10 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
04
adding doping materials, e.g. for np-junction
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 1-2-1, Shibaura, Minato-ku, Tokyo 1058634, JP
Inventors:
前川 浩一 MAEGAWA Koichi; JP
鳴嶋 康人 NARUSHIMA Yasuhito; JP
川上 泰史 KAWAKAMI Yasufumi; JP
小川 福生 OGAWA Fukuo; JP
木原 亜由美 KIHARA Ayumi; JP
Agent:
特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES; 東京都杉並区荻窪五丁目26番13号 3階 3rd Floor, 26-13, Ogikubo 5-chome, Suginami-ku, Tokyo 1670051, JP
Priority Data:
2017-08653025.04.2017JP
2017-08653225.04.2017JP
Title (EN) N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFER
(FR) PROCÉDÉ DE PRODUCTION DE MONOCRISTAL DE SILICIUM DE TYPE N, LINGOT MONOCRISTALLIN DE SILICIUM DE TYPE N, TRANCHE DE SILICIUM ET TRANCHE DE SILICIUM ÉPITAXIAL
(JA) n型シリコン単結晶の製造方法、n型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
Abstract:
(EN) An n-type silicon single crystal production method in which a silicon single crystal (10) is grown by means of the Czochralski process by being drawn upward from a silicon melt (9) that includes red phosphorous as a principal dopant. In this production method, a silicon single crystal (10) that has an electrical resistivity of 0.5–1.0 mΩcm is drawn using a quartz crucible (3A) that has an inner diameter that is 1.7–2.3 times the body diameter of the silicon single crystal (10).
(FR) L'invention concerne un procédé de production de monocristal de silicium de type n dans lequel on fait croître un monocristal de silicium (10) au moyen du procédé de Czochralski par le tirage vers le haut à partir d'une masse fondue de silicium (9) qui comprend du phosphore rouge comme dopant principal. Dans ce procédé de production, un monocristal de silicium (10) qui présente une résistivité électrique de 0,5-1,0 mΩcm est tiré à l'aide d'un creuset en quartz (3A) qui présente un diamètre interne qui représente 1,7 à 2,3 fois le diamètre du corps du monocristal de silicium (10).
(JA) 赤リンを主たるドーパントとして含むシリコン融液(9)から、チョクラルスキー法によりシリコン単結晶(10)を引き上げて成長させるn型シリコン単結晶の製造方法は、シリコン単結晶(10)の直胴径に対して、内径が1.7倍以上、2.3倍以下の石英ルツボ(3A)を用いて、電気抵抗率が0.5mΩcm以上、1.0mΩcm以下のシリコン単結晶(10)の引き上げを行う。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)