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1. (WO2018198583) SILICON WAFER POLISHING METHOD

Pub. No.:    WO/2018/198583    International Application No.:    PCT/JP2018/010367
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Sat Mar 17 00:59:59 CET 2018
IPC: H01L 21/304
B24B 37/015
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.
信越半導体株式会社
Inventors: TANAKA Yuki
田中 佑宜
KAMIHAMA Naoki
上▲濱▼ 直紀
Title: SILICON WAFER POLISHING METHOD
Abstract:
The present invention is a silicon wafer polishing method, comprising: a first polishing step for bringing the surface of a silicon wafer held by a polishing head into sliding contact with a polishing cloth attached to a surface plate and polishing the surface of the silicon wafer while supplying an alkali aqueous solution containing abrasive grains to the polishing cloth; and a second polishing step for bringing the surface of the silicon wafer into sliding contact with the polishing cloth while supplying an alkali aqueous solution that contains a high-molecular polymer and does not contain abrasive grains to the polishing cloth. The silicon wafer polishing method is characterized in that the polishing of the silicon wafer is performed by controlling the surface temperature of the polishing cloth such that the surface temperature of the polishing cloth during the second polishing step is at least 2°C higher than the surface temperature of the polishing cloth during the first polishing step. Due to this configuration, provided is a silicon wafer polishing method capable of combining a high degree of flatness with a reduction in surface roughness.