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1. (WO2018198575) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/198575    International Application No.:    PCT/JP2018/010274
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Fri Mar 16 00:59:59 CET 2018
IPC: H01L 29/78
H01L 29/739
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: SUMITOMO Masakiyo
住友 正清
Title: SEMICONDUCTOR DEVICE
Abstract:
A plurality of trench gate structures having gate electrodes (16a, 16b) are formed in a semiconductor substrate (10) having a drift layer (11), base layer (12), CS layer (13), and collector layer (22), and the gate electrodes (16a, 16b) have first gate electrodes (16a), to which a predetermined gate voltage is applied, and second gate electrodes (16b) that are electrically connected to a first electrode (20). Furthermore, the first gate electrodes (16a) are disposed such that at least parts of respective first gate electrodes are adjacent to each other, and the CS layer (13) is disposed at least between the adjacent first and second gate electrodes (16a, 16b). A region between the adjacent first gate electrodes (16a) has a region wherein a first conductivity-type impurity concentration is set lower than that of the CS layer (13) formed between the adjacent first and second gate electrodes (16a, 16b) so that a second carrier supplied from a second electrode (23) can easily pass when a current flows.