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1. (WO2018198521) METHOD FOR MANUFACTURING LAMINATED WAFER

Pub. No.:    WO/2018/198521    International Application No.:    PCT/JP2018/007254
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Wed Feb 28 00:59:59 CET 2018
IPC: H01L 21/02
H01L 21/265
H01L 27/12
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.
信越半導体株式会社
Inventors: YOKOKAWA Isao
横川 功
Title: METHOD FOR MANUFACTURING LAMINATED WAFER
Abstract:
The present invention provides a laminated wafer manufacturing method having an ion implantation process using a batch-type ion implanter, the laminated wafer manufacturing method being characterized in that ion implantation is performed in the ion implantation process to a bond wafer by emitting a light-element ion beam without forming an insulating film on a surface of the bond wafer or by emitting the light-element ion beam so that the ion beam passes through an insulating film having a thickness of 50 nm or less formed on the surface of the bond wafer and tilting the implantation angle with respect to the crystalline axis of the bond wafer, wherein the light-element ion beam is emitted on the front surface of the bond wafer so that the center of the light-element ion beam is emitted to a position which, on the surface of the bond wafer, is offset from the center of the bond wafer by a predetermined amount in a direction parallel to the direction of the center of the rotating body. Thus, there is provided a laminated wafer manufacturing method in which degradation in the intra-surface uniformity of ion implantation depth can be suppressed, and a laminated wafer having excellent intra-surface uniformity of the thickness of a thin film after delamination can be manufactured.