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1. (WO2018198193) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/198193 International Application No.: PCT/JP2017/016359
Publication Date: 01.11.2018 International Filing Date: 25.04.2017
IPC:
G02B 6/122 (2006.01) ,H01S 5/026 (2006.01) ,H01S 5/50 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
122
Basic optical elements, e.g. light-guiding paths
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
50
Amplifier structures not provided for in groups H01S5/02-H01S5/30100
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
中村 直幹 NAKAMURA, Naoki; JP
中井 栄治 NAKAI, Eiji; JP
篠原 弘介 SHINOHARA, Kosuke; JP
Agent:
高田 守 TAKADA, Mamoru; JP
高橋 英樹 TAKAHASHI, Hideki; JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMICONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMICONDUCTEUR
(JA) 半導体装置および半導体装置の製造方法
Abstract:
(EN) A semiconductor device relating to the present invention is provided with: a first waveguide; a second waveguide, which extends from one end of the first waveguide, and which has a width that is smaller than that of the first waveguide; and a current block layer surrounding the first waveguide and the second waveguide. At one end of the first waveguide, a plurality of first protruding sections protruding further toward the second waveguide side than a connection section between the first waveguide and the second waveguide are provided on both the sides of the second waveguide, and a (0-1-1) plane is not formed on each of the first protruding sections.
(FR) Un dispositif à semi-conducteur selon la présente invention comprend : un premier guide d'ondes; un deuxième guide d'ondes, qui s'étend à partir d'une extrémité du premier guide d'ondes, et qui a une largeur qui est inférieure à celle du premier guide d'ondes; et une couche de bloc courant entourant le premier guide d'ondes et le second guide d'ondes. Au niveau d'une extrémité du premier guide d'ondes, une pluralité de premières sections en saillie faisant saillie davantage vers le deuxième côté de guide d'ondes qu'une section de connexion entre le premier guide d'ondes et le deuxième guide d'ondes sont disposées sur les deux côtés du deuxième guide d'ondes, et a (0-1-1) plan n'est pas formé sur chacune des premières sections en saillie.
(JA) 本願の発明に係る半導体装置は、第1導波路と、第1導波路の一端から伸び、第1導波路よりも幅が狭い第2導波路と、第1導波路と第2導波路とを取り囲む電流ブロック層と、を備え、第1導波路の一端には、第1導波路と第2導波路との接続部よりも第2導波路側に突出した複数の第1凸部が、第2導波路の両側にそれぞれ設けられ、複数の第1凸部の各々には(0-1-1)面が形成されていない。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)