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1. (WO2018198137) SEMICONDUCTOR NANOCRYSTALS
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Pub. No.: WO/2018/198137 International Application No.: PCT/IN2018/050262
Publication Date: 01.11.2018 International Filing Date: 27.04.2018
IPC:
H01L 33/00 (2010.01) ,B01J 27/04 (2006.01) ,H01L 29/06 (2006.01) ,H01L 31/0296 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
27
Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
02
Sulfur, selenium or tellurium; Compounds thereof
04
Sulfides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0296
including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
Applicants:
INDIAN INSTITUTE OF SCIENCE [IN/IN]; Office of Intellectual Property and Technology Licensing, Karnataka Bangalore 560 012, IN
Inventors:
PANDEY, Anshu; IN
BHATTACHARYYA, Biswajit; IN
RAJASEKAR, Guru Pratheep; IN
SIMLANDY, Amit Kumar; IN
Agent:
LAKSHMIKUMARAN, Malathi; IN
PHILLIPS, Prashant; IN
RAE, Konpal; IN
PANDEYA, Jaya; IN
SRINIVASAN, T.; IN
Priority Data:
20174101522828.04.2017IN
Title (EN) SEMICONDUCTOR NANOCRYSTALS
(FR) NANOCRISTAUX SEMI-CONDUCTEURS
Abstract:
(EN) Present subject matter provides a semiconductor nanocrystal (100) comprises a core (102) and a shell (104). The core (102) is fabricated from a first semiconductor. The shell (104) is fabricated from a second semiconductor. The optical cross section of the semiconductor nanocrystal (100) is in a range of 10-17 cm2 – 10-12 cm2 in a 2 – 3 eV region. The core (102) is less than 2 nanometers from an outer surface of the shell (104) in at least one region of the semiconductor nanocrystal (100). Present subject matter also provides method for preparation of the semiconductor nanocrystals and method for photosynthesis of organic compounds.
(FR) La présente invention concerne un nanocristal semi-conducteur (100) qui comprend un cœur (102) et une écorce (104). Le cœur (102) est fabriqué à partir d’un premier semi-conducteur. L’écorce (104) est fabriquée à partir d’un deuxième semi-conducteur. La section transversale optique du nanocristal semi-conducteur (100) est comprise entre 10−17 cm2 et 10−12 cm2 dans une zone comprise entre 2 et 3 eV. Le cœur (102) est à moins de 2 nanomètres d’une surface extérieure de l’écorce (104) dans au moins une zone du nanocristal semi-conducteur (100). La présente invention concerne également un procédé de préparation des nanocristaux semi-conducteurs et un procédé de photosynthèse de composés organiques.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)