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1. (WO2018197994) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/197994    International Application No.:    PCT/IB2018/052701
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Fri Apr 20 01:59:59 CEST 2018
IPC: H01L 21/8242
H01L 21/822
H01L 21/8234
H01L 27/04
H01L 27/06
H01L 27/088
H01L 27/108
H01L 29/786
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventors: YAMAZAKI, Shunpei
MATSUBAYASHI, Daisuke
KATO, Kiyoshi
TOCHIBAYASHI, Katsuaki
NAGATSUKA, Shuhei
Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, a first capacitor, and a second capacitor. The first transistor includes an oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, a fourth insulator in contact with the second insulator, the first conductor, and the third insulator, and a fifth insulator in contact with the fourth insulator. The second transistor includes an oxide over the first insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator, and a ninth insulator in contact with the eighth insulator. The first capacitor includes an oxide, a tenth insulator over the oxide, and a third conductor over the tenth insulator. The second capacitor includes an oxide, an eleventh insulator over the oxide, and a fourth conductor over the eleventh insulator.