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1. (WO2018197378) METHOD AND DEVICE FOR GROWING A SINGLE CRYSTAL

Pub. No.:    WO/2018/197378    International Application No.:    PCT/EP2018/060271
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Tue Apr 24 01:59:59 CEST 2018
IPC: C30B 25/10
C23C 16/00
C30B 25/14
C30B 29/06
C30B 25/08
C30B 13/08
H01J 37/00
Applicants: EEPLASMA GMBH
Inventors: GSCHWANDTNER, Alexander
Title: METHOD AND DEVICE FOR GROWING A SINGLE CRYSTAL
Abstract:
The invention relates to a method for growing a single crystal by treating a process gas comprising a crystal-forming component in a plasma excited by electromagnetic waves and depositing the crystal-forming component of the process gas on the single crystal, in which method the process gas is introduced via a first gas inlet and an associated gas is introduced via a second gas inlet into a plasma chamber in such a way that the associated gas rotates around the process gas, the process gas is broken down in the plasma into its components, the broken-down process gas is conducted together with the associated gas into a process chamber in which the single crystal is arranged, and the crystal-forming component of the process gas is deposited on the single crystal. The invention further relates to a corresponding device.