Search International and National Patent Collections

1. (WO2018197096) DEVICE FOR CONTROLLING A SELF-CONDUCTING N-CHANNEL OUTPUT STAGE FIELD EFFECT TRANSISTOR

Pub. No.:    WO/2018/197096    International Application No.:    PCT/EP2018/056165
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Wed Mar 14 00:59:59 CET 2018
IPC: H03F 1/02
H03K 17/06
H03K 17/687
H03F 3/21
H03F 3/217
Applicants: FORSCHUNGSVERBUND BERLIN E.V.
Inventors: HOFFMANN, Thomas
Title: DEVICE FOR CONTROLLING A SELF-CONDUCTING N-CHANNEL OUTPUT STAGE FIELD EFFECT TRANSISTOR
Abstract:
The invention relates to a device (100) for controlling a self-conducting n-channel output stage field effect transistor (V1), comprising a control signal input (110), a control signal output (120) for connection to a gate electrode (V1G) of the output stage field effect transistor (V1), a first node (N1), which is connected to the control signal output (120), a second node (N2) and first transistor (V4). A source electrode (V4S) of the first transistor (V4) is connected to the first node (N1), a gate electrode (V4G) of the first transistor (V4) is connected to the second node (N2) and a drain electrode (V4D) of the first transistor (V4) is connected either to the source electrode of the output stage field effect transistor (V1) or to a supply voltage (+Vdd). A resistor (R1), with one end thereof, is connected to the second node (N2). The device (100) is characterised in that the resistor (R1), with the other end thereof, is connected to the first node (N1). Use of the first transistor (V4) can thus ensure that the supply voltage (Vdd) is present on the control signal output when a low-level signal is present on the control signal input (110).