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1. (WO2018196069) MANUFACTURING METHOD FOR INORGANIC THIN FILM TRANSISTOR, AND FLEXIBLE DISPLAY DEVICE
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Pub. No.: WO/2018/196069 International Application No.: PCT/CN2017/085562
Publication Date: 01.11.2018 International Filing Date: 23.05.2017
IPC:
H01L 21/336 (2006.01) ,H01L 29/06 (2006.01) ,H01L 21/683 (2006.01) ,H01L 27/32 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
Applicants:
武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD [CN/CN]; 中国湖北省武汉市 东湖开发区高新大道666号生物城C5栋 Building C5, Biolake of Optics Valley, No. 666 Gaoxin Avenue, East Lake High-tech Development Zone Wuhan, Hubei 430070, CN
Inventors:
梁博 LIANG, Bo; CN
Agent:
深圳市铭粤知识产权代理有限公司 MING & YUE INTELLECTUAL PROPERTY LAW FIRM; 中国广东省深圳市南山区南山街道前海路泛海城市广场2栋604室 Room 604 Building 2, Oceanwide City Square, Qianhai Road, Nanshan Street, Nanshan District Shenzhen, Guangdong 518066, CN
Priority Data:
201710296914.028.04.2017CN
Title (EN) MANUFACTURING METHOD FOR INORGANIC THIN FILM TRANSISTOR, AND FLEXIBLE DISPLAY DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À COUCHES MINCES INORGANIQUES, ET DISPOSITIF D'AFFICHAGE SOUPLE
(ZH) 无机薄膜晶体管的制作方法、柔性显示装置
Abstract:
(EN) A manufacturing method for an inorganic thin film transistor, comprising: sequentially forming a P-type semiconductor layer (210) and an N-type semiconductor layer (220) on a hard substrate (100); forming, in the P-type semiconductor layer, a groove (230) that runs through the N-type semiconductor layer; forming, on the N-type semiconductor layer, a source (310) and a drain (320) that are respectively located at two sides of the groove; transferring the P-type semiconductor layer, the N-type semiconductor layer, the source, and the drain to a flexible substrate (400) by means of rolling-over transferring; sequentially forming a gate insulating layer (600) and a gate (700) on the P-type semiconductor layer; and forming, on the gate insulating layer, a flat layer (800) covering the gate. Also provided is a flexible display device comprising an inorganic thin film transistor manufactured by means of the manufacturing method. An inorganic thin film transistor suitable for a flexible display process and having good electrical properties is manufactured by means of a nano-imprint method; a narrow-channel inorganic thin film transistor device is obtained by designing the structure of the inorganic thin film transistor. The process requirement is reduced, and costs are reduced.
(FR) L'invention concerne un procédé de fabrication d'un transistor à couches minces inorganiques, consistant à : former séquentiellement une couche semi-conductrice de type P (210) et une couche semi-conductrice de type N (220) sur un substrat dur (100); former, dans la couche semi-conductrice de type P, une rainure (230) qui s'étend à travers la couche semi-conductrice de type N; former, sur la couche semi-conductrice de type N, une source (310) et un drain (320) qui sont respectivement situés sur deux côtés de la rainure; transférer la couche semi-conductrice de type P, la couche semi-conductrice de type N, la source et le drain vers un substrat souple (400) au moyen d'un transfert par roulement; former séquentiellement une couche d'isolation de grille (600) et une grille (700) sur la couche semi-conductrice de type P; et former, sur la couche d'isolation de grille, une couche plate (800) recouvrant la grille. L'invention concerne également un dispositif d'affichage souple comprenant un transistor à couches minces inorganiques fabriqué au moyen du procédé de fabrication. Un transistor à couches minces inorganiques approprié pour un procédé d'affichage souple et ayant de bonnes propriétés électriques est fabriqué au moyen d'un procédé de nano-impression; un dispositif de transistor à couches minces inorganiques à canal étroit est obtenu par conception de la structure du transistor à couches minces inorganiques. L'exigence de traitement est réduite, et les coûts sont réduits.
(ZH) 一种无机薄膜晶体管的制作方法,包括:在硬质基板(100)上依次形成P型半导体层(210)和N型半导体层(220);在P型半导体层中形成贯穿N型半导体层的凹槽(230);在N型半导体层上形成分别位于凹槽两侧的源极(310)和漏极(320);通过翻转转移的方式将P型半导体层、N型半导体层、源极和漏极转移到柔性基板(400)上;在P型半导体层上依次形成栅极绝缘层(600)和栅极(700);在栅极绝缘层上形成覆盖栅极的平坦层(800)。还提供了一种由该制作方法制作的无机薄膜晶体管的柔性显示装置。通过纳米压印的方法制备适于柔性显示制程且有良好电学性能的无机薄膜晶体管,通过设计无机薄膜晶体管的结构,获得窄沟道无机薄膜晶体管器件,并降低制程要求,节约成本。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)