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1. (WO2018195830) FIELD EFFECT DEVICE, MANUFACTURING METHOD THEREFOR, AND CHIP USING SAME

Pub. No.:    WO/2018/195830    International Application No.:    PCT/CN2017/082062
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Thu Apr 27 01:59:59 CEST 2017
IPC: H01L 21/8238
Applicants: HUAWEI TECHNOLOGIES CO., LTD.
华为技术有限公司
Inventors: TSAI, Haocheng
蔡皓程
XU, Wanjie
徐挽杰
ZHANG, Chen-Xiong
张臣雄
Title: FIELD EFFECT DEVICE, MANUFACTURING METHOD THEREFOR, AND CHIP USING SAME
Abstract:
A field effect device, a manufacturing method therefor, and a chip using the same. The method comprises: forming a dummy gate structure (05) and a spindle structure (04) on a substrate baseplate (00), the substrate baseplate (00) comprising a first region (01) for forming a MOSFET and a second region (02) for forming a TFET; forming sidewalls (041, 051) around the dummy gate structure (05) and around the spindle structure (04) respectively; ion doping the source and drain areas (01a, 01b) of the MOSFET and a second electrode area of the TFET; removing the sidewall (041) outside a target area in the second region (02) and the spindle structure (04), the target area comprising an area in the second region (02) for forming a gate; ion doping a first electrode area of the TFET; and forming gates in the first region (01) and the second region (02) respectively. With the method, field effect devices incorporating a MOSFET and a TFET can be manufactured, and chips utilizing the field effect device have good performance and low power consumption.