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1. (WO2018195761) TRANSISTOR BASED ON TWO-DIMENSIONAL MATERIAL AND PREPARATION METHOD THEREFOR, AND TRANSISTOR ARRAY DEVICE

Pub. No.:    WO/2018/195761    International Application No.:    PCT/CN2017/081821
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Wed Apr 26 01:59:59 CEST 2017
IPC: H01L 27/02
H01L 21/77
Applicants: HUAWEI TECHNOLOGIES CO., LTD.
华为技术有限公司
Inventors: ZHAO, Chong
赵冲
XU, Huilong
徐慧龙
ZHANG, Chenxiong
张臣雄
Title: TRANSISTOR BASED ON TWO-DIMENSIONAL MATERIAL AND PREPARATION METHOD THEREFOR, AND TRANSISTOR ARRAY DEVICE
Abstract:
Provided is a transistor based on a two-dimensional material, comprising an insulating substrate (10), and a source electrode (11) and a drain electrode (12) being provided at two ends of the insulating substrate (10), wherein a channel (13) is provided between the source electrode (11) and the drain electrode (12), and the middle part of the channel (13) is provided with a first two-dimensional material layer (131); a second two-dimensional material layer (132) in a channel area provided on one side of the first two-dimensional material layer (131) and connected to the source electrode (11), and a third two-dimensional material layer (133) in a channel area provided at the other side of the first two-dimensional material layer (131) and connected to the drain electrode (12), wherein the three two-dimensional material layers are an integral film layer of the same material; and a gate dielectric layer (14) and a grid electrode (15) provided on the first two-dimensional material layer (131). The thickness of the second two-dimensional material layer (132) and the thickness of the third two-dimensional material layer (133) are both greater than the thickness of the first two-dimensional material layer (131). In the transistor structure, the second and third two-dimensional material layers in contact with the source and drain electrodes are thicker, so that the contact resistance can be reduced, whereas the first two-dimensional material layer in the middle part of the channel is thinner than the contact areas, thereby ensuring a high migration rate and the modulation of the gate on the channel at the same time. Further provided are a preparation method for a transistor based on a two-dimensional material and an application thereof.