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1. (WO2018195703) SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

Pub. No.:    WO/2018/195703    International Application No.:    PCT/CN2017/081658
Publication Date: Fri Nov 02 00:59:59 CET 2018 International Filing Date: Tue Apr 25 01:59:59 CEST 2017
IPC: H01L 33/00
Applicants: ENKRIS SEMICONDUCTOR, INC.
苏州晶湛半导体有限公司
Inventors: XIANG, Peng
向鹏
CHENG, Kai
程凯
Title: SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
Abstract:
Disclosed are a semiconductor structure, and a manufacturing method of a semiconductor structure capable of solving a problem in which an epitaxial structure cracks easily and has large warping and a high dislocation density. The semiconductor structure comprises a substrate and one or more composition modulation layers provided above the substrate. Each composition modulation layer is made of a semiconductor compound. The semiconductor compound at least comprises a first element and a second element. The first element has an atomic number less than an atomic number of the second element. In each composition modulation layer, an atom number percentage of the first element in the compound gradually decreases first and then gradually increases in an epitaxial direction of the substrate. A thickness of the gradual decrease section is greater than a thickness of the gradual increase section. The atom number percentage after the gradual increase is less than or equal to the atom number percentage before the gradual decrease.