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1. (WO2018195702) SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
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Pub. No.: WO/2018/195702 International Application No.: PCT/CN2017/081657
Publication Date: 01.11.2018 International Filing Date: 24.04.2017
IPC:
H01L 29/15 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
15
Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
Applicants:
苏州晶湛半导体有限公司 ENKRIS SEMICONDUCTOR, INC. [CN/CN]; 中国江苏省苏州市 苏州工业园区金鸡湖大道99号西北区20幢517-A室 Room 517-A Building NW-20, No. 99, Jinji Lake Avenue, Suzhou Industrial Park Suzhou, Jiangsu 215123, CN
Inventors:
向鹏 XIANG, Peng; CN
程凯 CHENG, Kai; CN
Agent:
北京布瑞知识产权代理有限公司 BRIGHTHEAD INTELLECTUAL PROPERTY AGENCY CO., LTD.; 中国北京市 朝阳区广顺北大街5号院内32号B228 B228 No. 32, Inside the No. 5 Yard, Guangshun North Street, Chaoyang District Beijing 100102, CN
Priority Data:
Title (EN) SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
(FR) STRUCTURE SEMI-CONDUCTRICE ET PROCÉDÉ DE FABRICATION DE STRUCTURE SEMI-CONDUCTRICE
(ZH) 一种半导体结构和制备半导体结构的方法
Abstract:
(EN) Disclosed are a semiconductor structure, and a manufacturing method of a semiconductor structure capable of solving a problem in the prior art in which an epitaxial structure made of a semiconductor compound and epitaxially grown over a substrate cracks easily and has large warping and a high dislocation density. The semiconductor structure comprises a substrate (1) and one or more periodic structures (3) provided above the substrate (1). Each periodic structure (3) comprises one or more periodic sections. Each periodic section comprises a first periodic layer (31) and a second periodic layer (32) sequentially stacked in an epitaxial direction.
(FR) L'invention concerne une structure semi-conductrice, et un procédé de fabrication d'une structure semi-conductrice capable de résoudre un problème dans l'état de la technique selon lequel une structure épitaxiale constituée d'un composé semi-conducteur et soumise à une croissance épitaxiale sur un substrat se fissure facilement et présente un gauchissement important ainsi qu'une densité de dislocations élevée. La structure semi-conductrice comprend un substrat (1) et une ou plusieurs structures périodiques (3) disposées au-dessus du substrat (1). Chaque structure périodique (3) comprend une ou plusieurs sections périodiques. Chaque section périodique comprend une première couche périodique (31) et une seconde couche périodique (32) empilées séquentiellement dans une direction épitaxiale.
(ZH) 一种半导体结构和制备半导体结构的方法,解决了现有技术中在衬底上外延生长半导体化合物外延结构所存在的易龟裂、翘曲大以及位错密度大的问题。该半导体结构包括:衬底(1);设置在所述衬底(1)上方的至少一个周期结构(3);其中,每个所述周期结构(3)包括至少一个周期,每个所述周期包括沿外延方向依次叠加的第一周期层(31)和第二周期层(32)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)