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1. (WO2018195698) ADVANCED FIELD STOP THYRISTOR STRUCTURE AND MANUFACTURE METHODS
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Pub. No.: WO/2018/195698 International Application No.: PCT/CN2017/081643
Publication Date: 01.11.2018 International Filing Date: 24.04.2017
IPC:
H01L 29/74 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
Applicants:
LITTELFUSE SEMICONDUCTOR (WUXI) CO., LTD. [CN/CN]; 3# Zhen FA 6 Road, Shuo Fang New District Wuxi, Jiangsu 214142, CN
Inventors:
SHEN, Ader; CN
ZHANG, Huan; CN
LI, Dongliang; CN
ZHOU, Jifeng; CN
Agent:
CCPIT PATENT AND TRADEMARK LAW OFFICE; 8th Floor, Vantone New World Plaza 2 Fuchengmenwai Street, Xicheng District Beijing 100037, CN
Priority Data:
Title (EN) ADVANCED FIELD STOP THYRISTOR STRUCTURE AND MANUFACTURE METHODS
(FR) STRUCTURE DE THYRISTOR DE DIAPHRAGMENT DE CHAMP AVANCÉ ET PROCÉDÉS DE FABRICATION
Abstract:
(EN) A power switching device may include a semiconductor substrate and a body region comprising an n-type dopant, the body region disposed in an inner portion of the semiconductor substrate; a first base layer disposed adjacent a first surface of the semiconductor substrate, the first p-base layer comprising a p-type dopant; a second base layer disposed adjacent a second surface of the semiconductor substrate, the second base layer comprising a p-type dopant; a first emitter region, disposed adjacent the first surface of the semiconductor substrate, the first emitter region comprising a n-type dopant; a second emitter-region, disposed adjacent the second surface of the semiconductor substrate, the second emitter-region comprising a n-type dopant; a first field stop layer arranged between the first base layer and the body region, the first field stop layer comprising a n-type dopant; and a second field stop layer arranged between the second base layer and the body region, the second field stop layer comprising a n-type dopant.
(FR) Un dispositif de commutation de puissance peut comprendre un substrat semi-conducteur et une région de corps comprenant un dopant de type n, la région de corps étant disposée dans une partie interne du substrat semi-conducteur; une première couche de base disposée adjacente à une première surface du substrat semi-conducteur, la première couche de base de type p comprenant un dopant de type p; une seconde couche de base disposée adjacente à une seconde surface du substrat semi-conducteur, la seconde couche de base comprenant un dopant de type p; une première région d'émetteur, disposée adjacente à la première surface du substrat semi-conducteur, la première région d'émetteur comprenant un dopant de type n; une seconde région d'émetteur, disposée adjacente à la seconde surface du substrat semi-conducteur, la seconde région d'émetteur comprenant un dopant de type n; une première couche de diaphragme de champ disposée entre la première couche de base et la région de corps, la première couche de diaphragme de champ comprenant un dopant de type n; et une seconde couche de diaphragme de champ disposée entre la seconde couche de base et la région de corps, la seconde couche de diaphragme de champ comprenant un dopant de type n.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)