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1. (WO2018193938) HEAT TREATMENT DEVICE AND MAINTENANCE METHOD FOR SAME
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/193938 International Application No.: PCT/JP2018/015265
Publication Date: 25.10.2018 International Filing Date: 11.04.2018
IPC:
H01L 21/027 (2006.01) ,G03F 7/38 (2006.01) ,G03F 7/40 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/31 (2006.01) ,H01L 21/324 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
38
Treatment before imagewise removal, e.g. prebaking
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
福本 靖博 FUKUMOTO Yasuhiro; JP
田中 裕二 TANAKA Yuji; JP
松尾 友宏 MATSUO Tomohiro; JP
石井 丈晴 ISHII Takeharu; JP
Agent:
杉谷 勉 SUGITANI Tsutomu; JP
Priority Data:
2017-08431921.04.2017JP
Title (EN) HEAT TREATMENT DEVICE AND MAINTENANCE METHOD FOR SAME
(FR) DISPOSITIF DE TRAITEMENT THERMIQUE ET SON PROCÉDÉ DE MAINTENANCE
(JA) 熱処理装置およびそのメンテナンス方法
Abstract:
(EN) An exhaust outlet (23) is provided to a side wall of a chamber (2), separate from a substrate gateway, and a gas recovery section (51) which emits the gas inside the chamber (2) is joined to the exhaust outlet (23). The gas recovery section is configured to be detachable from the chamber or attachable to the chamber via a draw latch (63). The exhaust outlet is opened by detaching the gas recovery section from the chamber. The exhaust outlet serves as an opening section for maintenance. As a result, maintenance within the chamber is made possible via an opening section of the chamber, provided separately from the substrate gateway, without increasing the number of opening sections.
(FR) Selon la présente invention, une sortie d'échappement (23) est disposée sur une paroi latérale d'une chambre (2), séparée d'une passerelle de substrat, et une section de récupération de gaz (51) qui émet le gaz à l'intérieur de la chambre (2) est reliée à la sortie d'échappement (23). La section de récupération de gaz est configurée pour être détachable de la chambre ou être fixée à la chambre par l'intermédiaire d'un verrou de traction (63). La sortie d'échappement est ouverte en détachant la section de récupération de gaz de la chambre. La sortie d'échappement sert de section d'ouverture pour la maintenance. Par conséquent, la maintenance à l'intérieur de la chambre est rendue possible par l'intermédiaire d'une section d'ouverture de la chambre, fournie séparément à partir de la passerelle de substrat, sans augmenter le nombre de sections d'ouverture.
(JA) 基板出入口とは別にチャンバ(2)の側壁には、排気口(23)が設けられており、その排気口には、チャンバ内の気体を排気する気体回収部(51)が接続されている。気体回収部は、パッチン錠(63)によって、チャンバから取り外され、また、チャンバに取り付けられるようになっている。気体回収部をチャンバから取り外すと、排気口が開かれる。この排気口がメンテナンス用の開口部となる。これにより、開口部の個数を増やさずに、基板出入口とは別に設けられたチャンバの開口部によって、チャンバ内のメンテナンスができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)