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1. (WO2018186389) PHOTOELECTRIC CONVERSION ELEMENT, PHOTOSENSOR AND IMAGING ELEMENT
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/186389 International Application No.: PCT/JP2018/014250
Publication Date: 11.10.2018 International Filing Date: 03.04.2018
IPC:
H01L 51/42 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
吉岡 知昭 YOSHIOKA Tomoaki; JP
福▲崎▼ 英治 FUKUZAKI Eiji; JP
野村 公篤 NOMURA Kimiatsu; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2017-07654007.04.2017JP
2018-01036525.01.2018JP
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT, PHOTOSENSOR AND IMAGING ELEMENT
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, PHOTODÉTECTEUR ET ÉLÉMENT IMAGEUR
(JA) 光電変換素子、光センサ、および、撮像素子
Abstract:
(EN) The present invention provides: a photoelectric conversion element which has excellent responsivity, while exhibiting excellent dark current characteristics in cases where a photoelectric conversion film is formed at a high rate; a photosensor and an imaging element, each of which comprises this photoelectric conversion element; and a compound. A photoelectric conversion element according to the present invention sequentially comprises a conductive film, a photoelectric conversion film and a transparent conductive film in this order; and the photoelectric conversion film contains a compound represented by formula (1) and an n-type organic semiconductor that has a specific structure.
(FR) La présente invention concerne : un élément de conversion photoélectrique qui présente une excellente sensibilité, tout en présentant d'excellentes caractéristiques de courant d'obscurité dans des cas où un film de conversion photoélectrique est formé à grande vitesse; un photodétecteur et un élément imageur, dont chacun comprend cet élément de conversion photoélectrique; et un composé. Un élément de conversion photoélectrique conforme à la présente invention comprend séquentiellement un film conducteur, un film de conversion photoélectrique et un film conducteur transparent dans cet ordre; et le film de conversion photoélectrique contient un composé représenté par la formule (1) et un semi-conducteur organique de type n qui présente une structure spécifique.
(JA) 本発明は優れた応答性、および、光電変換膜を高速成膜した場合において優れた暗電流特性を示す光電変換素子、光電変換素子を有する、光センサ、撮像素子、および、化合物を提供する。本発明の光電変換素子は、導電性膜、光電変換膜、および、透明導電性膜をこの順で有する光電変換素子であって、光電変換膜が、式(1)で表される化合物、および、所定の構造を有するn型有機半導体を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)