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1. WO2018185805 - SWITCHING ELEMENT DRIVE UNIT

Publication Number WO/2018/185805
Publication Date 11.10.2018
International Application No. PCT/JP2017/013909
International Filing Date 03.04.2017
IPC
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 23/36 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 25/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
CPC
H01L 23/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
H01L 23/3675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
367Cooling facilitated by shape of device
3675characterised by the shape of the housing
H01L 23/3677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
367Cooling facilitated by shape of device
3677Wire-like or pin-like cooling fins or heat sinks
H01L 23/4006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
40Mountings or securing means for detachable cooling or heating arrangements
4006with bolts or screws
H01L 25/072
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
072the devices being arranged next to each other
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 早瀬 佳 HAYASE Kei
Agents
  • 大岩 増雄 OIWA Masuo
  • 竹中 岑生 TAKENAKA Mineo
  • 村上 啓吾 MURAKAMI Keigo
  • 吉澤 憲治 YOSHIZAWA Kenji
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SWITCHING ELEMENT DRIVE UNIT
(FR) UNITÉ D'ATTAQUE D'ÉLÉMENT DE COMMUTATION
(JA) スイッチング素子駆動ユニット
Abstract
(EN)
Provided is a switching element drive unit with which it is possible, even when a semiconductor switching element configured from a wide-gap semiconductor is used, to reduce the connection distance between a driver and the semiconductor switching element while maintaining insulation between the driver and a cooler. A switching element drive unit (30) provided with: a circuit board (1); a semiconductor switching element (102a) configured from a wide-bandgap semiconductor; a cooler (4); and a driver (103a), the driver (103a) being surface-mounted on a second surface (32) on the opposite side to a first surface (31), which is the surface of the circuit board (1) on the side at which the cooler (4) is disposed.
(FR)
L'invention concerne une unité d'attaque d'élément de commutation à l'aide de laquelle il est possible, même lorsqu'un élément de commutation à semi-conducteur constitué d'un semi-conducteur à large bande interdite est utilisé, de réduire la distance de connexion entre un moyen d'attaque et l'élément de commutation à semi-conducteur tout en maintenant l'isolation entre le moyen d'attaque et un refroidisseur. Une unité (30) d'attaque d'élément de commutation selon l'invention comporte: une carte (1) à circuit; un élément (102a) de commutation à semi-conducteur constitué d'un semi-conducteur à large bande interdite; un refroidisseur (4); et un moyen (103a) d'attaque, ledit moyen (103a) d'attaque étant monté en surface sur une seconde surface (32) du côté opposé à une première surface (31), qui est la surface de la carte (1) à circuit du côté où est disposé le refroidisseur (4).
(JA)
ワイドギャップ半導体で構成された半導体スイッチング素子を用いる場合でも、ドライバと冷却器の絶縁を確保しつつ、ドライバと半導体スイッチング素子との接続距離を短くできるスイッチング素子駆動ユニットを提供する。回路基板(1)と、ワイドバンドギャップ半導体で構成された半導体スイッチング素子(102a)と、冷却器(4)と、ドライバ(103a)と、を備え、ドライバ(103a)は、冷却器(4)が配置された側の回路基板(1)の面である第1面(31)とは反対側の第2面(32)に表面実装されているスイッチング素子駆動ユニット(30)。
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