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1. (WO2018184843) METHOD FOR PRODUCING A MULTIPLICITY OF RADIATION-EMITTING SEMICONDUCTOR COMPONENTS, AND RADIATION-EMITTING SEMICONDUCTOR COMPONENT
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Pub. No.: WO/2018/184843 International Application No.: PCT/EP2018/057133
Publication Date: 11.10.2018 International Filing Date: 21.03.2018
IPC:
H01L 33/00 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/48 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
TÅNGRING, Ivar; DE
SCHLERETH, Thomas; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 107 234.904.04.2017DE
Title (EN) METHOD FOR PRODUCING A MULTIPLICITY OF RADIATION-EMITTING SEMICONDUCTOR COMPONENTS, AND RADIATION-EMITTING SEMICONDUCTOR COMPONENT
(FR) PROCÉDÉ DE FABRICATION D’UNE PLURALITÉ DE COMPOSANTS SEMI-CONDUCTEURS ÉMETTANT UN RAYONNEMENT ET COMPOSANT SEMI-CONDUCTEUR ÉMETTANT UN RAYONNEMENT
(DE) VERFAHREN ZUR HERSTELLUNG EINER VIELZAHL STRAHLUNGSEMITTIERENDER HALBLEITERBAUELEMENTE UND STRAHLUNGSEMITTIERENDES HALBLEITERBAUELEMENT
Abstract:
(EN) A method for producing a multiplicity of radiation-emitting semiconductor components comprising the following steps is specified: – providing an auxiliary carrier (1, 1`), – applying a multiplicity of radiation-emitting semiconductor chips (2) on the auxiliary carrier (1, 1`) by the rear side of said chips, – applying a first potting compound (8), thus giving rise to a semiconductor chip composite assembly, and – separating the semiconductor chip composite assembly in each case between two semiconductor chips (2) by means of sawing, wherein the auxiliary carrier (1, 1`) is not severed, with the result that in each case a layer of the first potting compound (8) arises at least on side surfaces of the semiconductor chips (2). In addition, a further method and a radiation-emitting semiconductor component are specified.
(FR) L’invention concerne un procédé de fabrication d’une pluralité de composants semi-conducteurs émettant un rayonnement, consistant à obtenir un support auxiliaire (1, 1’), à appliquer une pluralité de puces semi-conductrices (2) sur le support auxiliaire (1, 1’), avec leur côté arrière, à appliquer une première matière de scellement (8) de sorte à former une liaison de puces semi-conductrices, et à séparer la liaison de puces semi-conductrices respectivement entre deux puces semi-conductrices (2) par sciage, le support auxiliaire (1, 1’) n’étant pas sectionné, de manière qu’une couche respective de la première matière de scellement (8) soit formée au moins sur les surfaces latérales des puces semi-conductrices (2). L'invention concerne également un procédé supplémentaire et un composant semi-conducteur émettant un rayonnement.
(DE) Es wird ein Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente mit den folgenden Schritten angegeben: - Bereitstellen eines Hilfsträgers (1, 1`), - Aufbringen einer Vielzahl strahlungsemittierender Halbleiterchips (2) auf den Hilfsträger (1, 1`) mit ihren Rückseite, - Aufbringen einer ersten Vergussmasse (8), so dass ein Halbleiterchipverbund entsteht, und - Trennen des Halbleiterchipverbunds jeweils zwischen zwei Halbleiterchips (2) mittels Sägen, wobei der Hilfsträger (1,1`) nicht durchtrennt wird, so dass zumindest auf Seitenflächen der Halbleiterchips (2) jeweils eine Schicht der ersten Vergussmasse (8) entsteht. Außerdem werden ein weiteres Verfahren und eine strahlungsemittierendes Halbleiterbauelement angegeben.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)