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1. (WO2018184279) TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF

Pub. No.:    WO/2018/184279    International Application No.:    PCT/CN2017/084601
Publication Date: Fri Oct 12 01:59:59 CEST 2018 International Filing Date: Wed May 17 01:59:59 CEST 2017
IPC: H01L 21/84
H01L 27/12
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
武汉华星光电技术有限公司
Inventors: ZHANG, Haijie
张海杰
ZHANG, Zhandong
张占东
YANG, Ling
杨玲
Title: TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF
Abstract:
A TFT substrate and a manufacturing method thereof are provided. The method for manufacturing a TFT substrate comprises: first etching a gate insulation layer (40) to form two first via holes (41); forming two jumper metal blocks (61) in the two first via holes (41); and etching an interlayer dielectric layer (70) to form two second via holes (71) respectively connected to the two first via holes (41), in which a source (81) and a drain (82) respectively contact the two jumper metal blocks (61) via the two second via holes (71). The conventional one-stage etching process for manufacturing a via hole structure in a gate insulation layer and an interlayer dielectric layer is improved by making it a two-stage etching process, and thereby the uniformity of an active layer can be improved and process difficulty can be reduced, the issue in which etching stops due to a large etching thickness is avoided, and product quality is improved.