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1. (WO2018183374) VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

Pub. No.:    WO/2018/183374    International Application No.:    PCT/US2018/024629
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Wed Mar 28 01:59:59 CEST 2018
IPC: H01L 29/872
H01L 29/45
H01L 29/47
Applicants: QROMIS, INC.
Inventors: ODNOBLYUDOV, Vladimir
AKTAS, Ozgur
Title: VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
Abstract:
A vertical Schottky diode includes an ohmic contact, a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration, and a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration. The vertical Schottky diode further includes a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer, and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region.