Search International and National Patent Collections
|1. (WO2018182741) TRANSISTORS WITH NON-VERTICAL GATES|
MA, Sean, T.
METZ, Matthew, V.
KENNEL, Harold, W.
KAVALIEROS, Jack, T.
MURTHY, Anand, S.
|Title:||TRANSISTORS WITH NON-VERTICAL GATES|
In various embodiments, the disclosure describes transistors having non-vertical gates. In one embodiment, the non-vertical gates can have a curved or wide angle gate in order to reduce the electric field crowing on the drain side of the gate edge and/or portions having comers and thereby reduce leakage current in the transistor. In one embodiment, the non- vertical gate can be generated by one or more etching steps (for example, isotropic etching steps) of an underlying channel during the fabrication of a transistor having the non- vertical gate. In one embodiment, the non-vertical gate can be generated by one or more directional etching steps that may expose various facets having predetermined orientations of a source and/or drain associated with the transistor.