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1. (WO2018182740) SPIN HALL EFFECT DEVICE WITH SPIN ABSORPTION LAYER

Pub. No.:    WO/2018/182740    International Application No.:    PCT/US2017/025604
Publication Date: Fri Oct 05 01:59:59 CEST 2018 International Filing Date: Sat Apr 01 01:59:59 CEST 2017
IPC: G11C 11/16
H01L 43/08
H01L 27/22
Applicants: INTEL CORPORATION
Inventors: MANIPATRUNI, Sasikanth
NIKONOV, Dmitri, E.
YOUNG, Ian, A.
Title: SPIN HALL EFFECT DEVICE WITH SPIN ABSORPTION LAYER
Abstract:
Techniques are disclosed for forming magnetic random access memory (MRAM) devices and logic devices that includes a layer of material to induce a spin Hall effect (SHE) that is in contact with a layer of a spin absorption material. Disposing a spin absorption material layer in contact with a SHE material improves switching efficiency of devices that include this interface.